Part Number 13N50H
Manufacturer KIA
Description The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology 2. Features „ RDS(on)=...
Features „ RDS(on)=0.48Ω @ VGS=10V „ Low gate charge ( typical 43nC) „ Fast switching capability „ Avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 5 Function Gate Drain Source Drain KIA SEMICONDUCTORS 13Amps,500V N-CHANNEL MOSFET 13N50H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous Drain current pulsed (note1) TC=25ºC TC=100ºC Avalanche energy Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note 3) VDSS VGSS ID IDP EAR EAS dv/dt Total power dissipation TC=25...

Document Datasheet 13N50H datasheet pdf (185.44KB)

Unisonic Technologies
Part Number 13N50K
Manufacturer Unisonic Technologies
Description The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide low.
Features * RDS(ON) <0.48Ω @VGS = 10V * Ultra low gate charge (typical 39nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 1 TO-220F2  ORDERING INFORMATION Ordering Number Lead Free .

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Part Number 13N50DM2
Manufacturer STMicroelectronics
Title N-channel Power MOSFET
Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (t.
Features Order code STD13N50DM2AG VDS 500 V RDS(on ) max. 360 mΩ ID 11 A
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected Applications
• Switching applications.

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Fairchild Semiconductor
Part Number 13N50CF
Manufacturer Fairchild Semiconductor
Title N-Channel MOSFET
Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan.
• 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary pl.

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Fairchild Semiconductor
Part Number 13N50C
Manufacturer Fairchild Semiconductor
Title 500V N-Channel MOSFET
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a.

• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS E.

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