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CGHV96050F1 CREE Input/Output Matched GaN HEMT Datasheet

CGHV96050F1-AMP GaN 트랜지스터 For Use With CGHV96050F1


CREE
CGHV96050F1
Part Number CGHV96050F1
Manufacturer CREE
Description Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium ars...
Features
• 7.9 - 8.4 GHz Operation

• 80 W POUT typical >13 dB Power Gain
• 33% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop Applications
• Satellite Communication
• Terrestrial Broadband Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGHV96050F1 Absolute Maximum Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Drain Current1 Maximum Forward Gate Current Soldering Temperature2 Screw Torque Symbol ...

Document Datasheet CGHV96050F1 datasheet pdf (1.59MB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
2 units: 1662494.5 KRW
BuyNow BuyNow BuyNow (Manufacturer a MACOM)




CGHV96050F1 Distributor

part
MACOM
CGHV96050F1-AMP
GaN 트랜지스터 For Use With CGHV96050F1
2 units: 1662494.5 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
MACOM
CGHV96050F1
GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
50 units: 475.75 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
MACOM
CGHV96050F1
Trans RF MOSFET 100V 6A 3-PinCase 440210
1 units: 592.85 USD
Distributor
Verical

30 In Stock
BuyNow BuyNow
part
MACOM
CGHV96050F1
RF POWER TRANSISTOR
1 units: 395.21 USD
Distributor
Richardson RFPD

30 In Stock
BuyNow BuyNow





CGHV96050F1 Similar Datasheet

Part Number Description
CGHV96050F2
manufacturer
Wolfspeed
GaN HEMT
Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96050F2 Package Type: 440217 Typical Performance Over 8.4 - 9.6 GH...
CGHV96050F2
manufacturer
MACOM
GaN HEMT
The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96050F2 Package Type: 440217 Typical Performance Over 8.4 - 9.6 GHz (TC =...




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