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2N6301 Savantic Silicon NPN Power Transistors Datasheet

2N6301 NPN TRANSISTOR


Savantic
2N6301
Part Number 2N6301
Manufacturer Savantic
Description ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Abso...
Features Product Specification 2N6300 2N6301 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6300 2N6301 IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA VBEsat Base-emitter saturation voltage IC=8A; IB=80mA VBE Base -emitter on voltage IC=4A ; VCE=3V 2N6300 VCE=60V; VBE(off)=1.5V TC=150 ICEX Collector cut-off current 2N6301 VCE=80V; VBE(off)=1.5V TC=150 2N6300 VCE=30V; IB=0 ICEO Collector cut-off current 2N6301 VCE=...

Document Datasheet 2N6301 datasheet pdf (111.88KB)
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DigiKey
Stock 258 In Stock
Price
100 units: 26.6402 USD
1 units: 28.68 USD
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2N6301 Distributor

Microchip Technology Inc
2N6301
NPN TRANSISTOR
100 units: 26.6402 USD
1 units: 28.68 USD
Distributor
DigiKey

258 In Stock
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Microchip Technology Inc
2N6301
Bipolar Transistors - BJT Power BJT
1 units: 28.68 USD
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Mouser Electronics

31 In Stock
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Microchip Technology Inc
2N6301E3
Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray
100 units: 18.07 USD
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Arrow Electronics

58 In Stock
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Microchip Technology Inc
2N6301
Power BJT _ TO-66, Projected EOL: 2049-02-05
1 units: 28.68 USD
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Microchip Technology Inc

314 In Stock
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Microchip Technology Inc
2N6301
250 units: 24.76 USD
100 units: 25.14 USD
50 units: 25.52 USD
25 units: 26.55 USD
10 units: 27.61 USD
5 units: 28.04 USD
1 units: 30.6 USD
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Onlinecomponents.com

0 In Stock
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Microchip Technology Inc
2N6301E3
Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray
1 units: 54.7886 USD
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Verical

58 In Stock
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VPT Components
JANTX2N6301
Bipolar Transistors - BJT MIL-PRF-19500/539
1 units: 29.35 USD
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TTI

72 In Stock
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Njs
2N6301
Bipolar Junction Transistor, Darlington, NPN Type, TO-66
1 units: 15.21 USD
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Quest Components

3 In Stock
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part
Microsemi Corporation
JANTXV2N6301
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
100 units: 40.86 USD
500 units: 39.8 USD
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Richardson RFPD

0 In Stock
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part
Central Semiconductor Corp
2N6301
Trans Darlington NPN 80V 8A 2-Pin TO-66 Box - Rail/Tube (Alt: 2N6301)
No price available
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Avnet Americas

0 In Stock
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2N6301 Similar Datasheet

Part Number Description
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2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 ...
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis...
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TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 00C (1) @ TC = 1000C VCEO VCBO VEBO IB IC PT Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 0.428 W/0C above TC > 00C 2N6300 2N6301 60 80 60 80 5.0 120 8.0 75 32 -55 to +200 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc 2N6300 2N6301 V(BR)CEO...
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·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PA...
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DARLINGTON SILICON POWER TRANSISTORS
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec...
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NPN Darlington Power Silicon Transistor
2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 ...
2N6301
manufacturer
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis...
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PNP DARLINGTON POWER SILICON TRANSISTOR
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2N6301
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DARLINGTON SILICON POWER TRANSISTORS
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec...




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