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2N6300 Central Semiconductor COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Datasheet

2N6300 Bipolar Transistors - BJT Power BJT


Central Semiconductor
2N6300
Part Number 2N6300
Manufacturer Central Semiconductor (https://www.centralsemi.com/)
Description The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Bas...
Features 00mA (2N6298, 2N6300) 60 BVCEO IC=100mA (2N6299, 2N6301) 80 VCE(SAT) IC=4.0A, IB=16mA VCE(SAT) IC=8.0A, IB=80mA VBE(SAT) IC=8.0A, IB=80mA VBE(ON) VCE=3.0V, IC=4.0A hFE VCE=3.0V, IC=4.0A 750 hFE VCE=3.0V, IC=8.0A 100 hfe VCE=3.0V, IC=3.0A, f=1.0kHz 300 fT VCE=3.0V, IC=3.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN types) Cob VCB=10V, IE=0, f=100kHz (PNP types) MAX 0.5 5.0 0.5 2.0 2.0 3.0 4.0 2.8 18K 200 300 UNITS V V V A A mA W °C °C/W UNITS mA mA mA mA V V V V V V MHz pF pF R3 (2-September 2014) 2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON PO...

Document Datasheet 2N6300 datasheet pdf (163.45KB)
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Mouser Electronics
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1 units: 28.4 USD
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Microchip Technology Inc
2N6300
트랜지스터 - 양극(BJT) - 단일
100 units: 38052.62 KRW
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DigiKey

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Microchip Technology Inc
2N6300
Bipolar Transistors - BJT Power BJT
1 units: 28.4 USD
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Mouser Electronics

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Microchip Technology Inc
2N6300
Power BJT _ TO-66, Projected EOL: 2049-02-05
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Microchip Technology Inc

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Microchip Technology Inc
2N6300
100 units: 25.17 USD
75 units: 25.69 USD
50 units: 32.45 USD
25 units: 52.73 USD
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Onlinecomponents.com

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Harwin
M80-7046305
Power to the Board 63 POS FEMALE VERTICAL W/JACKSCREW
15 units: 40.26 USD
30 units: 38.72 USD
60 units: 37.36 USD
90 units: 35.72 USD
255 units: 34.27 USD
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TTI

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Stc Components (Pty) Ltd
2N6300JAN
1 units: 73.0204 USD
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Quest Components

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Microchip Technology Inc
2N6300
Trans Darlington NPN 60V 8A 3-Pin(2+Tab) TO-66 - Bulk (Alt: 2N6300)
500 units: 25.37 USD
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1 units: 28.4 USD
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NES
JANTX2N6300
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Bristol Electronics

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Microchip Technology Inc
2N6300
100 units: 25.17 USD
75 units: 25.69 USD
50 units: 32.45 USD
25 units: 52.73 USD
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2N6300 Similar Datasheet

Part Number Description
2N6300
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2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 ...
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·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PA...
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2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec...
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2N6300 & 2N6301 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-500/539 • TO-66 (TO-213AA) Package • Designed for High Gain Amplifier and Medium Speed Switching Applications Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 100 mA dc; 2N6300 IC = 100 mA dc; 2N6301 VCE = 30 V dc; 2N6300 VCE = 40 V dc; 2N6301 VCE = 60 V dc; VBE = -1.5 V dc; 2N6300 VCE = 80 V dc; VBE = -1.5 V dc; 2N6301 VEB = 5 V dc V(BR)CEO V dc ICEO mA dc ICEX1 ...
2N6301
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.0 8.0 16 120 75 -65 to +200 2.33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwis...
2N6301
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·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N6300 2N6301 VCEO Collector-emitter voltage 2N6300 2N6301 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PA...
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2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 2N6301 VCEO Collec...




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