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LM8050I ON Semiconductor Amplifier Transistors Datasheet


ON Semiconductor
LM8050I
Part Number LM8050I
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description LM8050I, LM8050J Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and ...
Features lication Order Number: LM8050I/D LM8050I, LM8050J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector
  –Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25
  –
  – Vdc Collector
  –Base Breakdown Voltage (IC = 0.5 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CBO 30
  –
  – Vdc V(BR)EBO 6.0
  –
  – Vdc ICBO
  –
  – 50 nAdc ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 350 mAdc, VCE = 1.0 Vdc) Collector
  –Emitter Saturation ...

Document Datasheet LM8050I datasheet pdf (28.85KB)




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LM8050I, LM8050J Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Symbol RθJA RθJC Value 25 30 6.0 800 Unit Vdc Vdc Vdc mAdc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW/°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 1 23 TO–92 CASE ...
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