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IRFS3307PbF International Rectifier HEXFET Power MOSFET Datasheet

IRFS3307PBF HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB


International Rectifier
IRFS3307PbF
IRFS3307PbF
Part Number IRFS3307PbF
Manufacturer International Rectifier
Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced bod...
Features rmally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RJC Parameter kJunction-to-Case RCS RJA RJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak Max. 120™l 84™l 510 l200 l1.3 ± 20 -55 to + 175 300 x x10lb in (1.1N m) 270 See Fig. 14, 15, 16a, 16b Typ.
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  – 0.50
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  –
  –
  –
  – Max. l0.61
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  – 62 40 Units A W W/°C V °C mJ A mJ Units °C/W www.irf.com 1 01/20/12 IRFB/S/SL3307PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter M...

Document Datasheet IRFS3307PbF datasheet pdf (328.14KB)
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part
International Rectifier
IRFS3307PBF
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
No price available
Distributor
ComSIT Asia

400 In Stock
No Longer Stocked





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