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2N2369A TAITRON High Speed Metal Can Transistor Datasheet

2N2369A Bipolar Transistors - BJT Small-Signal BJT


TAITRON
2N2369A
Part Number 2N2369A
Manufacturer TAITRON
Description 2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derat...
Features
• High Speed Switching Application
• Low Power
• RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams High Speed Metal Can Transistor (NPN) 2N2369/2N2369A TO-18 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Po...

Document Datasheet 2N2369A datasheet pdf (174.35KB)
Distributor Distributor
Mouser Electronics
Stock 441 In Stock
Price
1 units: 3.96 USD
500 units: 3.69 USD
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2N2369A Distributor

part
SPC Multicomp
2N2369A
TRANSISTOR, NPN, TO-18
100 units: 621 KRW
10 units: 631 KRW
1 units: 684 KRW
Distributor
element14 Asia-Pacific

0 In Stock
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part
Microchip Technology Inc
2N2369A
트랜지스터 - 양극(BJT) - 단일 NPN 15V 360mW 스루홀 TO-18(TO-206AA)
100 units: 5322.75 KRW
1 units: 5712 KRW
Distributor
DigiKey

239 In Stock
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part
Microchip Technology Inc
2N2369A
Bipolar Transistors - BJT Small-Signal BJT
1 units: 3.96 USD
500 units: 3.69 USD
Distributor
Mouser Electronics

441 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N2369A
Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
1 units: 3.642 USD
Distributor
Arrow Electronics

18 In Stock
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part
Microchip Technology Inc
2N2369A
Small-Signal BJT _ TO-18, Projected EOL: 2049-02-05
1 units: 3.96 USD
Distributor
Microchip Technology Inc

1687 In Stock
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part
Microchip Technology Inc
2N2369A
2N2369A Series 15 V 400nA 360 mW NPN Silicon Transistor - TO-18 (TO-206AA)
5000 units: 3.53 USD
2500 units: 3.55 USD
1000 units: 3.56 USD
500 units: 3.58 USD
250 units: 3.6 USD
100 units: 3.62 USD
50 units: 3.92 USD
5 units: 4.4 USD
Distributor
Onlinecomponents.com

195 In Stock
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part
Microchip Technology Inc
2N2369A
Trans GP BJT NPN 15V 360mW 3-Pin TO-18 Bag
500 units: 4.654 USD
250 units: 4.68 USD
100 units: 4.706 USD
50 units: 5.109 USD
15 units: 5.72 USD
Distributor
Verical

195 In Stock
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part
Microchip Technology Inc
2N2369A
2N2369A Series 15 V 400nA 360 mW NPN Silicon Transistor - TO-18 (TO-206AA)
300 units: 3.71 USD
125 units: 3.92 USD
40 units: 4.03 USD
15 units: 4.14 USD
1 units: 4.32 USD
Distributor
Future Electronics

0 In Stock
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part
VPT Components
JANS2N2369A
Bipolar Transistors - BJT MIL-PRF-19500/317
1 units: 28.34 USD
Distributor
TTI

500 In Stock
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part
Motorola Semiconductor Products
2N2369A
Bipolar Junction Transistor, NPN Type, TO-18
1 units: 0.52 USD
Distributor
Quest Components

1 In Stock
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2N2369A Similar Datasheet

Part Number Description
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2N2368 2N2369,A 2N3227 2N2369A JAN, JTX, JTXV AVAILABLE CASE 22, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage 2N2368,9,A 2N3227 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N2368,9,A 2N3227 Collector Current (10 fisec pulse) —Collector Current Continuous 2N2369A, 2N3227 Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation (a TC = 25°C Derate above 25°C 2N3227 Total Device Dissipation (a Tc = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol vCEO V CES v CBO v EBO !c(Peak)
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2N2368 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 40V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 1/10m (VCE / IC) * Maximum Working Voltage Min. 20 Typ. 400M Max. 40 0.2 60 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@semel...
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2N2369 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 40V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 1/10m (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 400M Max. 40 0.2 120 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@seme...
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Collector -Emitter Voltage Collector -Emitter Voltage SYMBOL VCEO VCES VALUE 15 40 Collector -Base Voltage VCBO 40 Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse) VEBO IC IC(peak) 4.5 200 500 Power Dissipation@ Ta=25 degC PD 360 Derate Above 25 deg C @Tc=25 deg C @Tc=100 deg C PD PD 2.06 1.2 0.68 Derate Above100 deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage VCEO*(sus)IC=10mA, IB=0 VC...
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The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO I CM Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Peak Current (t = 10 µs) Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4.5 0.5 0.36 1.2 0.68 – 65 to 200 Unit V V V V A W W W °C T s t g, T j Products ap...
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2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed Switching Applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2369, 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Collector Emitt...
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High Speed Metal Can Transistor
2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derate above TA=25°C 2.06 PD Power Dissipation at TC=25°C 1.2 Power Dissipation at TC=100°C 0.68 Power Dissipation Derate above TC=100°C 6.85 TJ, TSTG Operating Junction and Storage Temperature Range -65 to +200 Unit V V V V mA mA mW mW/° C W W mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6...




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