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SVD1N60T Silan Microelectronics 600V N-CHANNEL MOSFET Datasheet


Silan Microelectronics
SVD1N60T
Part Number SVD1N60T
Manufacturer Silan Microelectronics
Description SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provi...
Features ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ.)=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N60M SVD1N60M SVD1N60T SVD1N60B SVD1N60BTR SVD1N60D SVD1N60DTR Package TO-251-3L TO-251D-3L TO-220-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L Marking SVD1N60M SVD1N60M SVD1N60T 1N60B 1N60B SVD1N60D SVD1N60D Material Pb free Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Bulk AMMO Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.4 2011.06.28 Page 1 of 10 SVD1N60M/T/B/D_Datas...

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SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ.)=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N60M SVD1N60M SVD1N...
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