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HYMP564S64CP6-C4 Hynix 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb Datasheet


Hynix
HYMP564S64CP6-C4
Part Number HYMP564S64CP6-C4
Manufacturer Hynix
Description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Jul. 2007 1 1200pin Unbuffered DDR2 SDRAM SO-DIMMs SPEED GRADE & KEY PARAMETERS E3 (DDR2-400) Speed @CL3 Speed @CL4 Speed @CL5 Sp...
Features
• JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply All inputs and outputs are compatible with SSTL_1.8 interface Posted CAS Programmable CAS Latency 3, 4, 5, 6 OCD (Off-Chip Driver Impedance Adjustment) and ODT (On-Die Termination) Fully differential clock operations (CK & CK)






• Programmable Burst Length 4 / 8 with both sequential and interleave mode Auto refresh and self refresh supported 8192 refresh cycles / 64ms Serial presence detect with EEPROM DDR2 SDRAM Package: 60ball(x8), 84ball(x16) FBGA 67.60 x 30.00 mm form factor Lead-fr...

Document Datasheet HYMP564S64CP6-C4 datasheet pdf (295.06KB)




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Similar Datasheet

Part Number Description
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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Jul. 2007 1 1200pin Unbuffered DDR2 SDRAM SO-DIMMs SPEED GRADE & KEY PARAMETERS E3 (DDR2-400) Speed @CL3 Speed @CL4 Speed @CL5 Speed @CL6 CL-tRCD-tRP 400 533 3-3-3 C4 (DDR2-533) 533 533 4-4-4 Y5 (DDR2-667) 400 533 667 5-5-5 S6 (DDR2-800) 533 667 800 5-5-5 S5 (DDR2-800) 533 800 5-5-5 Unit Mbps Mbps Mbps Mbps tCK ADDRESS TABLE Density 256MB 512MB 1GB Organization Ranks 32M x 64 64M x 64 128M x 64 1 2 2 SDRAMs 32Mb x 16 32Mb x 16 64Mb x 8 # of DRAMs 4 8 16 # of row/bank/column Address 13(A0~A12)/2(BA0~BA1)/10(A0~A9) 13(A0~A12...
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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Jul. 2007 1 1200pin Unbuffered DDR2 SDRAM SO-DIMMs SPEED GRADE & KEY PARAMETERS E3 (DDR2-400) Speed @CL3 Speed @CL4 Speed @CL5 Speed @CL6 CL-tRCD-tRP 400 533 3-3-3 C4 (DDR2-533) 533 533 4-4-4 Y5 (DDR2-667) 400 533 667 5-5-5 S6 (DDR2-800) 533 667 800 5-5-5 S5 (DDR2-800) 533 800 5-5-5 Unit Mbps Mbps Mbps Mbps tCK ADDRESS TABLE Density 256MB 512MB 1GB Organization Ranks 32M x 64 64M x 64 128M x 64 1 2 2 SDRAMs 32Mb x 16 32Mb x 16 64Mb x 8 # of DRAMs 4 8 16 # of row/bank/column Address 13(A0~A12)/2(BA0~BA1)/10(A0~A9) 13(A0~A12...
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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Jul. 2007 1 1200pin Unbuffered DDR2 SDRAM SO-DIMMs SPEED GRADE & KEY PARAMETERS E3 (DDR2-400) Speed @CL3 Speed @CL4 Speed @CL5 Speed @CL6 CL-tRCD-tRP 400 533 3-3-3 C4 (DDR2-533) 533 533 4-4-4 Y5 (DDR2-667) 400 533 667 5-5-5 S6 (DDR2-800) 533 667 800 5-5-5 S5 (DDR2-800) 533 800 5-5-5 Unit Mbps Mbps Mbps Mbps tCK ADDRESS TABLE Density 256MB 512MB 1GB Organization Ranks 32M x 64 64M x 64 128M x 64 1 2 2 SDRAMs 32Mb x 16 32Mb x 16 64Mb x 8 # of DRAMs 4 8 16 # of row/bank/column Address 13(A0~A12)/2(BA0~BA1)/10(A0~A9) 13(A0~A12...
HYMP564S64CP6-Y5
manufacturer
Hynix
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb
and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Jul. 2007 1 1200pin Unbuffered DDR2 SDRAM SO-DIMMs SPEED GRADE & KEY PARAMETERS E3 (DDR2-400) Speed @CL3 Speed @CL4 Speed @CL5 Speed @CL6 CL-tRCD-tRP 400 533 3-3-3 C4 (DDR2-533) 533 533 4-4-4 Y5 (DDR2-667) 400 533 667 5-5-5 S6 (DDR2-800) 533 667 800 5-5-5 S5 (DDR2-800) 533 800 5-5-5 Unit Mbps Mbps Mbps Mbps tCK ADDRESS TABLE Density 256MB 512MB 1GB Organization Ranks 32M x 64 64M x 64 128M x 64 1 2 2 SDRAMs 32Mb x 16 32Mb x 16 64Mb x 8 # of DRAMs 4 8 16 # of row/bank/column Address 13(A0~A12)/2(BA0~BA1)/10(A0~A9) 13(A0~A12...




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