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AP9980GJ-HF Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet


Advanced Power Electronics
AP9980GJ-HF
Part Number AP9980GJ-HF
Manufacturer Advanced Power Electronics
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage application...
Features 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3 62.5 110 Units ℃/W ℃/W ℃/W 1 201102143 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9980GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static...

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AP9980GJ-HF Similar Datasheet

Part Number Description
AP9980GJ-HF-3
manufacturer
Advanced Power Electronics
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S D (tab) TO-252 (H) The AP9980GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP9980GJ-HF-3) is available where a small PCB footprint is required. G D S D (tab) TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA =25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rat...




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