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AP9980GJ Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet


Advanced Power Electronics
AP9980GJ
Part Number AP9980GJ
Manufacturer Advanced Power Electronics
Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage app...
Features its V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201101061-1/4 AP9980GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 80 1 - Typ. 0.07 20 18 5 11 11 20 29 30 135 96 1.6 Max. ...

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