AP9970GK-HF Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet

Advanced Power Electronics
Part Number AP9970GK-HF
Manufacturer Advanced Power Electronics
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C...
Features hout notice AP9970GK-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.05 5 11.5 2.5 6 6 5 22.5 6 910 95 70 1.2 Max. Units 50 60 3 1 25 +100 15 1450 1.8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=5A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forw...

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