AP9970GP-HF Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet

Advanced Power Electronics
Part Number AP9970GP-HF
Manufacturer Advanced Power Electronics
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D TO-220(P) S Absolute Maximum Ratin...
Features Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.4 62 Units ℃/W ℃/W 1 200907272 Data and specifications subject to change without notice AP9970GP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gat...

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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9970GP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives. The TO-220 through-hole package is often used where a small PCB footprint or an attached heatsink is required. G D TO-220 (P) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C ID at TC=25°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (Silicon Limited) Continuous Drain Curren...

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