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SSM3J331R Toshiba Semiconductor Silicon P-Channel MOSFET Datasheet

SSM3J331R,LF MOSFET P-CH 20V 4A SOT23F


Toshiba Semiconductor
SSM3J331R
Part Number SSM3J331R
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55...
Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SOT-23F SSM3J331R 1. Gate 2. Source 3. Drain ©2016 Toshiba Corporation 1 Start of commercial production 2011-07 2016-08-24 Rev.5.0 SSM3J331R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain current (D...

Document Datasheet SSM3J331R datasheet pdf (236.19KB)
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Price
1000 units: 0.09016 USD
500 units: 0.12152 USD
100 units: 0.149 USD
10 units: 0.295 USD
1 units: 0.42 USD
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Toshiba America Electronic Components
SSM3J331R,LF(T
MOSFET, P-CH, 20V, 4A, SOT-23F
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500 units: 123 KRW
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Toshiba America Electronic Components
SSM3J331R,LF
MOSFET P-CH 20V 4A SOT23F
1000 units: 0.09016 USD
500 units: 0.12152 USD
100 units: 0.149 USD
10 units: 0.295 USD
1 units: 0.42 USD
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DigiKey

5442 In Stock
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Toshiba America Electronic Components
SSM3J331R,LF
MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF
1 units: 0.42 USD
10 units: 0.295 USD
100 units: 0.122 USD
1000 units: 0.091 USD
3000 units: 0.072 USD
9000 units: 0.062 USD
24000 units: 0.06 USD
45000 units: 0.051 USD
99000 units: 0.05 USD
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Mouser Electronics

7720 In Stock
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SSM3J331R,LF(T
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R
150000 units: 0.1202 USD
75000 units: 0.1216 USD
45000 units: 0.1228 USD
30000 units: 0.124 USD
24000 units: 0.1254 USD
15000 units: 0.1266 USD
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Arrow Electronics

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Toshiba America Electronic Components
SSM3J331R,LF(T
Trans MOSFET P-CH 20V 4A 3-Pin SOT-23F
5 units: 0.226 USD
50 units: 0.151 USD
100 units: 0.14 USD
200 units: 0.139 USD
500 units: 0.118 USD
1000 units: 0.111 USD
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Toshiba America Electronic Components
SSM3J331R,LF(T
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R
150000 units: 0.1195 USD
75000 units: 0.121 USD
45000 units: 0.1221 USD
30000 units: 0.1233 USD
24000 units: 0.1247 USD
15000 units: 0.1259 USD
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SSM3J331R,LF(A
SSM3J331R - Small Low ON resistance MOSFETs
1000 units: 0.1029 USD
500 units: 0.1089 USD
100 units: 0.1137 USD
25 units: 0.1186 USD
1 units: 0.121 USD
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SSM3J331R,LF(B
673 units: 0.238 USD
169 units: 0.2975 USD
1 units: 0.595 USD
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SSM3J331R,LF
Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -10A; 2W; SOT23F
3000 units: 0.088 USD
500 units: 0.095 USD
100 units: 0.106 USD
25 units: 0.12 USD
5 units: 0.152 USD
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SSM3J331R
PB-F SOT-23F PCH MOSFET (LF) TRANSISTOR PD: 1W VDS=-20V - Tape and Reel (Alt: SSM3J331R,LF)
300000 units: 0.0512 USD
30000 units: 0.0524 USD
24000 units: 0.054 USD
18000 units: 0.0552 USD
12000 units: 0.0568 USD
6000 units: 0.0596 USD
3000 units: 0.0612 USD
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SSM3J331R Similar Datasheet

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SSM3J332R
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SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 12 V Drain current DC ID (Note 1) -6.0 A Pulse IDP (Note 1,2) -24.0 Power dissipation PD (Note 3) 1 W t < 10s 2 Channel temperature Storage temperature range Tch 150 °C Tstg -55 to 150 °C SOT-23F 1: Gate...
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SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications Unit: mm • Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID (Note 1) -4 A Pulse IDP (Note 1,2) -16 Power dissipation PD (Note 3) 1 W t < 10s 2 Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high tem...
SSM3J338R
manufacturer
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Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2021-09-16 Rev.2.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±10 Drain current (DC)...




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