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SSM3J332R Toshiba Semiconductor Silicon P-Channel MOSFET Datasheet

SSM3J332R,LF MOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS


Toshiba Semiconductor
SSM3J332R
Part Number SSM3J332R
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ ...
Features operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3Z1S absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 11 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: PW ≤ 1ms, Duty ≤ 1% Note 3: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 3 Equivalent Circuit (Top Vi...

Document Datasheet SSM3J332R datasheet pdf (345.17KB)
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1 units: 0.41 USD
10 units: 0.286 USD
100 units: 0.117 USD
1000 units: 0.089 USD
3000 units: 0.07 USD
9000 units: 0.061 USD
24000 units: 0.06 USD
45000 units: 0.051 USD
99000 units: 0.05 USD
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Toshiba America Electronic Components
SSM3J332R,LF(T
MOSFET, P-CH, 30V, 6A, SOT-23F
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SSM3J332R,LF
P채널 30V 6A(Ta) 1W(Ta) 표면 실장 SOT-23F
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SSM3J332RLF(T
Trans MOSFET P-CH 30V 6A 3-Pin SOT-23F T/R (Alt: SSM3J332R,LF(T)
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Toshiba America Electronic Components
SSM3J332R,LF
MOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS
1 units: 0.41 USD
10 units: 0.286 USD
100 units: 0.117 USD
1000 units: 0.089 USD
3000 units: 0.07 USD
9000 units: 0.061 USD
24000 units: 0.06 USD
45000 units: 0.051 USD
99000 units: 0.05 USD
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Mouser Electronics

386862 In Stock
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Toshiba America Electronic Components
SSM3J332R,LF
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R
1000 units: 0.0683 USD
500 units: 0.1096 USD
250 units: 0.1108 USD
100 units: 0.1119 USD
25 units: 0.2666 USD
10 units: 0.2693 USD
1 units: 0.3839 USD
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SSM3J332R,LF(T
MOSFET
25 units: 0.289 USD
50 units: 0.216 USD
100 units: 0.119 USD
200 units: 0.108 USD
1000 units: 0.0899 USD
2000 units: 0.0841 USD
3000 units: 0.0675 USD
6000 units: 0.067 USD
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Toshiba America Electronic Components
SSM3J332R,LF
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R
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500 units: 0.1096 USD
250 units: 0.1108 USD
110 units: 0.1119 USD
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SSM3J332R,LF
MOSFETs MOSFET (LF) TRANSISTOR
3000 units: 0.067 USD
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SSM3J332R,LF(B
162 units: 0.207 USD
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SSM3J332R,LF(T
Transistor: P-MOSFET; unipolar; -30V; -6A; 1W; SOT23F
3000 units: 0.08 USD
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25 units: 0.107 USD
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SSM3J332R Similar Datasheet

Part Number Description
SSM3J331R
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MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SOT-23F SSM3J331R 1. Gate 2. Source 3. Drain ©2016 Toshiba Corporation 1 Start of commercial production 2011-07 2016-08-24 Rev.5.0 SSM3J331R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain curre...
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SSM3J338R
manufacturer
Toshiba
Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2021-09-16 Rev.2.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±10 Drain current (DC)...




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