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PHN210T NXP Dual N-channel TrenchMOS intermediate level FET Datasheet

PHN210T MOSFET Transistor, Matched Pair, N-Channel, SO


NXP
PHN210T
Part Number PHN210T
Manufacturer NXP (https://www.nxp.com/)
Description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Suitable for high fre...
Features and benefits
 Suitable for high frequency applications due to fast switching characteristics
 Suitable for logic level gate drive sources
 Suitable for low gate drive sources 1.3 Applications
 DC-to-DC converters
 Logic level translators
 Motor and relay drivers 1.4 Quick reference data Table 1. Symbol VDS Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 150 °C; Repetitive peak drain-source voltage Tsp = 25 °C; Single device Tsp = 25 °C [1] [2] Min - Typ - Max Unit 30 V ID Ptot - ...

Document Datasheet PHN210T datasheet pdf (125.04KB)
Distributor Distributor
Quest Components
Stock 353 In Stock
Price
1 units: 0.26 USD
BuyNow BuyNow BuyNow (Manufacturer a Philips Semiconductors)




PHN210T Distributor

Philips Semiconductors
PHN210T
MOSFET Transistor, Matched Pair, N-Channel, SO
1 units: 0.26 USD
Distributor
Quest Components

353 In Stock
BuyNow BuyNow
part
NXP Semiconductors
PHN210T
DUAL N-CHANNEL ENHANCEMENT MODE TRENCHMOS TRANSISTOR Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
No price available
Distributor
ComSIT Asia

2500 In Stock
No Longer Stocked
part
NXP Semiconductors
PHN210T
No price available
Distributor
Bristol Electronics

1691 In Stock
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PHN210T Similar Datasheet

Part Number Description
PHN210
manufacturer
NXP
Dual N-channel enhancement mode TrenchMOS transistor
Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • d.c. to d.c. converters • Logic level translator The PHN210 is supplied in the SOT96-1 (SO8) surface mounting package. PINNING PIN 1 2 3 4 5,6 7,8 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 1 SOT96-1 8 7 6 5 pin 1 index 1 2 3 4 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Repetitive peak drain-source voltage Continuous drain-source voltage Drain-gate voltage Gate-source voltage Drain current per MOSFET1 Drain current per MOSF...




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