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2SD1164-Z Renesas SILICON POWER TRANSISTOR Datasheet


Renesas
2SD1164-Z
Part Number 2SD1164-Z
Manufacturer Renesas (https://www.renesas.com/)
Description R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Volt...
Features
• High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.0 2 4 2.0 150 −55 to +150 UNIT V V V A A W °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature PT Tj Tstg Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The mark shows major revised points. The revised points can be easily s...

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