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BDX34 TRANSYS (BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS Datasheet

BDX34C TRANS PNP DARL 100V 10A TO220


TRANSYS
BDX34
BDX34
Part Number BDX34
Manufacturer TRANSYS
Description SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet...
Features mA, IB=0 IC=100mA, RBE=100 W IC=100mA, VBE=1.5V VCE=1/2rated VCEO, IB=0 Tc=100ºC VCE=1/2rated VCEO, IB=0 ICBO IE=0,VCB=Rated VCBO, Tc=100ºC IE=0,VCB=Rated VCBO, >45 >60 >80 >100 >120 UNIT V >45 >45 <0.5 >60 >60 <0.5 >80 >80 <0.5 >100 >100 <0.5 >120 >120 <0.5 V V mA <10 <10 <10 <10 <10 mA <1 <1 <1 <1 <1 mA <5 <5 <5 <5 <5 mA Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BD...

Document Datasheet BDX34 datasheet pdf (151.85KB)
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DigiKey
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10000 units: 0.22914 USD
5000 units: 0.24748 USD
2000 units: 0.26123 USD
1000 units: 0.2933 USD
500 units: 0.34464 USD
100 units: 0.4125 USD
50 units: 0.5682 USD
1 units: 0.69 USD
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BDX34 Distributor

part
STMicroelectronics
BDX34C
DARLINGTON TRANSISTOR, TO-220
5000 units: 346 KRW
1000 units: 373 KRW
500 units: 484 KRW
100 units: 579 KRW
10 units: 848 KRW
1 units: 955 KRW
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element14 Asia-Pacific

1782 In Stock
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part
STMicroelectronics
BDX34C
TRANS PNP DARL 100V 10A TO220
10000 units: 0.22914 USD
5000 units: 0.24748 USD
2000 units: 0.26123 USD
1000 units: 0.2933 USD
500 units: 0.34464 USD
100 units: 0.4125 USD
50 units: 0.5682 USD
1 units: 0.69 USD
Distributor
DigiKey

283 In Stock
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STMicroelectronics
BDX34C
Darlington Transistors Silicon Pwr Trnsistr
1 units: 0.68 USD
10 units: 0.569 USD
100 units: 0.412 USD
500 units: 0.352 USD
1000 units: 0.3 USD
2000 units: 0.261 USD
5000 units: 0.246 USD
10000 units: 0.229 USD
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Mouser Electronics

4098 In Stock
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STMicroelectronics
BDX34C
Low voltage PNP Power Darlington transistor
1 units: 0.67 USD
10 units: 0.56 USD
100 units: 0.4 USD
500 units: 0.35 USD
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STMicroelectronics

4098 In Stock
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SMC Corporation of America
AFF37B-10BD-X34
MAIN LINE FILTER, AFF SERIES | SMC Corporation AFF37B-10BD-X34
1 units: 593.9 USD
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RS

0 In Stock
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onsemi
BDX34CG
BDX34C - Power Bipolar Transistor, 10A, 100V, PNP, TO-220AB, Plastic/Epoxy, 3 Pin
1000 units: 0.397 USD
500 units: 0.4203 USD
100 units: 0.439 USD
25 units: 0.4577 USD
1 units: 0.467 USD
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Rochester Electronics

304 In Stock
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Harris Semiconductor
BDX34A
Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB
1 units: 0.51 USD
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Quest Components

7 In Stock
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part
STMicroelectronics
BDX34C
Transistor: PNP; bipolar; Darlington; 100V; 10A; 70W; TO220AB
5000 units: 0.291 USD
1000 units: 0.295 USD
500 units: 0.327 USD
250 units: 0.363 USD
100 units: 0.417 USD
50 units: 0.462 USD
10 units: 0.567 USD
1 units: 0.648 USD
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TME

653 In Stock
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part
Fairchild Semiconductor Corporation
BDX34B
PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
No price available
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ComSIT Asia

1200 In Stock
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BDX34
INSTOCK
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Chip 1 Exchange

62 In Stock
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BDX34 Similar Datasheet

Part Number Description
BDX10
manufacturer
Seme LAB
Bipolar NPN Device
www.DataSheet4U.com BDX10 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CON...
BDX11
manufacturer
Seme LAB
Bipolar NPN Device
BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 140V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test C...
BDX11
manufacturer
INCHANGE
NPN Transistor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 160 V 140 V 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 15 A 117 W 150 ℃ -55~150 ℃ isc website:ww...
BDX12
manufacturer
Seme LAB
Bipolar NPN Device
BDX12 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Co...
BDX12
manufacturer
INCHANGE
NPN Transistor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 100 W Junction Temperature...
BDX13
manufacturer
INCHANGE
NPN Transistor
·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHA...
BDX14
manufacturer
INCHANGE
PNP Transistor
·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCER Collector-Emitter Voltage RBE= 100Ω -60 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~20 0 ℃ THERM...
BDX14A
manufacturer
Inchange Semiconductor
Silicon PNP Power Transistor
·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Large Signal Power Amplification and Medium Current Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCER Collector-Emitter Voltage RBE= 100Ω -60 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~20...
BDX14AA
manufacturer
Seme LAB
PNP Silicon Transistor
BDX14AA MECHANICAL DATA Dimensions in mm PNP SILICON TRANSISTOR, EPITAXIAL BASE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) FEATURES: • LF Large Signal Power Amplification • Medium Current Switching 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Package. Pin 1 – Base Pin 2 – Emitter Case - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VCER VCEX VEBO IC IB Ptot TJ TSTG Rth-(j-c) Collector – Base Voltage (Open Emitter) Collector – Emitter Voltage (Open Base) Collector – Em...
BDX16
manufacturer
INCHANGE
PNP Transistor
·Contunuous Collector Current-IC= -3A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCER Collector-Emitter Voltage RBE= 100Ω -150 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -4 A IB Base Current-Continuou...




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