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2N2218A Comset Semiconductor Switching Silicon Transistors Datasheet

2N2218A 트랜지스터 - 양극(BJT) - 단일 NPN 30V 800mA 800mW 스루홀 TO-39(TO-205AD)


Comset Semiconductor
2N2218A
Part Number 2N2218A
Manufacturer Comset Semiconductor
Description NPN 2N2218 – 2N2218A 2N2219 – 2N2219A SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and lo...
Features useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.8 3 175 -65 to +200 °C °C TJ TStg Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to amb...

Document Datasheet 2N2218A datasheet pdf (134.40KB)
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DigiKey
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100 units: 12434.18 KRW
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2N2218A Distributor

part
SPC Multicomp
2N2218A
Transistor Polarity:NPN
1000 units: 985 KRW
500 units: 1059 KRW
250 units: 1167 KRW
100 units: 1293 KRW
25 units: 1460 KRW
10 units: 1646 KRW
1 units: 1785 KRW
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element14 Asia-Pacific

2 In Stock
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Microchip Technology Inc
2N2218A
트랜지스터 - 양극(BJT) - 단일 NPN 30V 800mA 800mW 스루홀 TO-39(TO-205AD)
100 units: 12434.18 KRW
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DigiKey

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Microchip Technology Inc
2N2218A
Bipolar Transistors - BJT Small-Signal BJT
1 units: 9.29 USD
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Mouser Electronics

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Microchip Technology Inc
2N2218A
Small-Signal BJT _ TO-39, Projected EOL: 2049-02-05
1 units: 9.29 USD
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Microchip Technology Inc

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Microchip Technology Inc
2N2218A
1000 units: 8.03 USD
500 units: 8.15 USD
250 units: 8.28 USD
100 units: 8.61 USD
50 units: 8.84 USD
25 units: 9.09 USD
5 units: 10.07 USD
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Onlinecomponents.com

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VPT Components
JAN2N2218A
Bipolar Transistors - BJT MIL-PRF-19500/251
50 units: 17.15 USD
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TTI

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Motorola Semiconductor Products
2N2218A
Bipolar Junction Transistor, NPN Type, TO-39
5 units: 1.1304 USD
1 units: 1.413 USD
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Quest Components

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GS Battery
2N2218A
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Chip 1 Exchange

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Microchip Technology Inc
2N2218A
Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 - Bulk (Alt: 2N2218A)
500 units: 8.3 USD
100 units: 8.62 USD
1 units: 9.29 USD
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Avnet Americas

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Central Semiconductor Corp
2N2218A
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Bristol Electronics

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SYMBOL 2N2218, 19 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD 30 60 5 800 800 4.57 Power Dissipation @ Tc=25ºC PD 3 Derate Above 25ºC 17.1 Operating and Storage Junction Tj, Tstg -65 to +200 Temperature Range UNIT V V V mA mW mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector ...
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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL LEVELS JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2218A; L 2N2219 2N2219A; L Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 60 75 Emitter-Base Voltage VEBO 5.0 6.0 Collector Current Total Power Dissipat...
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manufacturer
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NPN 2N2218 – 2N2218A 2N2219 – 2N2219A SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.8 3 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto...
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A Silicon NPN transistor in a TO-39 case intended for high speed switching applications. Absolute Maximum Ratings: Collector-Base Voltage, Vcbo Collector-Emitter Voltage, Vceo Emitter-Base Voltage, Vebo Continuous Collector Current, Ic Total Device Dissipation (Tc = +25ºC), PD Derate above 25ºC Total Device Dissipation (Ta = + 25ºC), Pd Derate above 25ºC Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg : 75V : 40V : 6V : 800mA : 1.2W : 6.85mW/ºC : 400mW : 2.28mW/ºC : -65ºC to +200 ºC : -65ºC to 200ºC Electrical Characteristics: (Ta = +25ºC Unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakd...




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