logo

2N5884 STMicroelectronics COMPLEMENTARY SILICON HIGH POWER TRANSISTORS Datasheet

2N5884 Bipolar Transistors - BJT Power BJT


STMicroelectronics
2N5884
Part Number 2N5884
Manufacturer STMicroelectronics (https://www.st.com/)
Description The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter PNP NPN V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base V...
Features case Thermal Resistance Junction-case Max 0.875 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEO V CE = rated V CEO V CE = rated V CBO V CE = 40 V V EB = 5 V I C = 200 mA I C = 15 A I C = 25 A I C = 25 A I C = 10 A IC = 3 A I C = 10 A I C = 25 A IC = 3 A IC = 1 A I B = 1.5 A I B = 6.25 A I B = 6.25 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V ...

Document Datasheet 2N5884 datasheet pdf (68.99KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
1 units: 67.34 USD
BuyNow (No Longer Stocked Microchip Technology Inc)




2N5884 Distributor

part
SPC Multicomp
2N5884
BIPOLAR TRANSISTOR, PNP, -80V, TO-3
5000 units: 5549 KRW
2500 units: 5702 KRW
1000 units: 6125 KRW
500 units: 6630 KRW
250 units: 7448 KRW
100 units: 8191 KRW
10 units: 9189 KRW
1 units: 10427 KRW
Distributor
element14 Asia-Pacific

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5884
트랜지스터 - 양극(BJT) - 단일
100 units: 90212.84 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5884
Bipolar Transistors - BJT Power BJT
1 units: 67.34 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Microchip Technology Inc
2N5884
Power BJT _ TO-3, Projected EOL: 2049-02-05
1 units: 67.34 USD
Distributor
Microchip Technology Inc

0 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5884
100 units: 59.7 USD
75 units: 60.91 USD
50 units: 86.56 USD
25 units: 163.51 USD
Distributor
Onlinecomponents.com

0 In Stock
BuyNow BuyNow
part
onsemi
2N5884G
2N5884 - Power Bipolar Transistor, 25A, 80V, PNP, TO-204AA, Metal, 2 Pin
1000 units: 3.9 USD
500 units: 4.13 USD
100 units: 4.31 USD
25 units: 4.49 USD
1 units: 4.59 USD
Distributor
Rochester Electronics

12 In Stock
BuyNow BuyNow
part
Solid State Manufacturing
2N5884
TO 3 25 Amp Silicon Transistor | Solid State Manufacturing 2N5884
10 units: 5.55 USD
50 units: 5.28 USD
100 units: 5 USD
200 units: 4.72 USD
Distributor
RS

0 In Stock
No Longer Stocked
part
Interconnect Devices Inc
2N5884
Bipolar Junction Transistor, PNP Type, TO-3
2 units: 4.5 USD
1 units: 6.75 USD
Distributor
Quest Components

1 In Stock
BuyNow BuyNow
part
Microchip Technology Inc
2N5884
Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-3 - Bulk (Alt: 2N5884)
500 units: 60.13 USD
100 units: 62.54 USD
1 units: 67.34 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
STMicroelectronics
2N5884
No price available
Distributor
Bristol Electronics

69 In Stock
No Longer Stocked





2N5884 Similar Datasheet

Part Number Description
2N5800
manufacturer
ETC
SILICON P-CHANNEL JUNCTION FET
2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Field·Effect Transistors de· signed primarily for low-power, audio amplifier applications. • Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi • Drain and Source Interchangeable • Low Gate Reverse Current - IGSS = 1.0 nAdc (Maxi • Unibloc Plastic Package Encapsulation P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC Derate above 25°C Operating and Storage Junction Temperature Range "'Indicates JEDEC Registered Data. Symbol VOS V...
2N5804
manufacturer
RCA
Power Transistors
File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transistors 2N5804 2N5805 High-voltage, High~.Power Silicon N-P-N Power Transistors For Switching and Amplifier Applications Features: JEDEC TO-3 .. Power dissipation (PT) = 110 W at SO V • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05** are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdow...
2N5804
manufacturer
Seme LAB
Bipolar NPN Device
www.DataSheet4U.com 2N5804 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 300V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CO...
2N5804
manufacturer
SavantIC
(2N5804 / 2N5805) Silicon NPN Power Transistors
·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5804 Collector-base voltage 2N5805 2N5804 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N5805 Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 300 6 5 110 150 -65~200 V A W Open emitter 375 225 V CONDITIONS VALUE 300 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case...
2N5805
manufacturer
RCA
Power Transistors
File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transistors 2N5804 2N5805 High-voltage, High~.Power Silicon N-P-N Power Transistors For Switching and Amplifier Applications Features: JEDEC TO-3 .. Power dissipation (PT) = 110 W at SO V • High-voltage ratings: VCEO(sus) = 300 V max. (2NS80S) = 22S V max: (2NS804) a Maximum-operating-area curves. .for selection of maximum operating conditions for operation free from second breakdown. RCA types 2NSB04 and 2NSB05** are silicon n-p-n transistors with high breakdown-voltage ratings and fast switching speeds. Both devices employ the popular TO-3 package; they differ in breakdow...
2N5805
manufacturer
SavantIC
(2N5804 / 2N5805) Silicon NPN Power Transistors
·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5804 Collector-base voltage 2N5805 2N5804 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N5805 Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 300 6 5 110 150 -65~200 V A W Open emitter 375 225 V CONDITIONS VALUE 300 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case...
2N5810
manufacturer
Micro Electronics
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR
...
2N5811
manufacturer
Micro Electronics
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR
...
2N5812
manufacturer
Micro Electronics
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR
...
2N5812
manufacturer
Central Semiconductor Corp
Small Signal Transistors
LEAD VCBO VCEO CODE (V) MIN 35 35 50 50 50 50 70 70 120 160 60 45 30 25 40 40 250 300 350 250 300 350 80 80 80 70 40 60 80 60 80 25 25 25 25 25 25 40 50 40 30 30 (V) *VCES MIN 25 25 40 40 40 40 60 60 100 140 60 45 30 25 40 40 250 300 350 250 300 350 60 60 60 60 35 40 60 40 60 25 25 25 25 25 25 25 30 20 30 30 VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV MAX 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 8.0 8.0 8.0 5.0 12 12 6.0 6.0 6.0 5.0 5.0 5.0 10 10 10 5.0 25 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 MAX 100 100 100 100 100 100 100 100 50 50 2.0 2.0 2.0 100 50 50 50 50 50 50 50 50 100 100 100 10 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 25 25 25 25 25 25 2...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy