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2SD0662B Panasonic Semiconductor Silicon NPN Transistor Datasheet


Panasonic Semiconductor
2SD0662B
Part Number 2SD0662B
Manufacturer Panasonic Semiconductor
Description www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type p...
Features (1.5) R 0.9 R 0.7
■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 (0.85) Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature 3 (2.5) 2 (2.5) 1.25±0.05 0.55±0.1 1: Base 2: Collector 3: Emitter M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base...

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2SD0662B Similar Datasheet

Part Number Description
2SD0662
manufacturer
Panasonic Semiconductor
Silicon NPN Transistor
www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 (1.0) 2.4±0.2 0.45±0.05 1 ■ Features (1.5) R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 ...




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