logo

BUJ103AD NXP Silicon diffused power transistor Datasheet

BUJ103AD,118 Bipolar Transistors - BJT Trans GP BJT NPN 400V 4A 3-Pin(2+Tab)


NXP
BUJ103AD
Part Number BUJ103AD
Manufacturer NXP (https://www.nxp.com/)
Description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1....
Features and benefits
 Low thermal resistance
 Fast switching 1.3 Applications
 Electronic lighting ballasts
 Inverters
 DC-to-DC converters
 Motor control systems 1.4 Quick reference data
 VCESM  700 V
 Ptot  80 W
 IC  4 A
 hFEsat = 12.5 (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector Simplified outline mb [1] 2 13 SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. Symbol 2 1 3 sym056 NXP Semiconductors BUJ103AD Silicon diffused power transistor ...

Document Datasheet BUJ103AD datasheet pdf (126.02KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
2500 units: 0.217 USD
7500 units: 0.217 USD
10000 units: 0.21 USD
25000 units: 0.201 USD
BuyNow (No Longer Stocked WeEn Semiconductor Co Ltd)




BUJ103AD Distributor

part
WeEn Semiconductor Co Ltd
BUJ103AD,118
트랜지스터 - 양극(BJT) - 단일 NPN 400V 4A 80W 표면 실장 DPAK
25000 units: 417.23737 KRW
12500 units: 421.4096 KRW
7500 units: 455.12173 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
WeEn Semiconductor Co Ltd
BUJ103AD,118
Bipolar Transistors - BJT Trans GP BJT NPN 400V 4A 3-Pin(2+Tab)
2500 units: 0.217 USD
7500 units: 0.217 USD
10000 units: 0.21 USD
25000 units: 0.201 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
WeEn Semiconductor Co Ltd
BUJ103AD118
Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: BUJ103AD,118)
750000 units: 0.2818 USD
375000 units: 0.28601 USD
75000 units: 0.29021 USD
37500 units: 0.29442 USD
20000 units: 0.29863 USD
12500 units: 0.30283 USD
7500 units: 0.30704 USD
Distributor
Avnet Americas

0 In Stock
BuyNow BuyNow
part
WeEn Semiconductor Co Ltd
BUJ103AD,118
Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R (Alt: BUJ103AD,118)
No price available
Distributor
Avnet Silica

0 In Stock
BuyNow BuyNow
part
WeEn Semiconductor Co Ltd
BUJ103AD,118
Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R (Alt: BUJ103AD,118)
No price available
Distributor
EBV Elektronik

0 In Stock
BuyNow BuyNow





BUJ103AD Similar Datasheet

Part Number Description
BUJ103
manufacturer
NXP
Silicon Diffused Power Transistor
BUJ103A High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V 2 Tmb ≤ 25 ˚C IC = 3.0 A;IB = 0.6 A IC = 3.0 A; VCE = 5 V Ic=2A,IB1=0.4A TYP. 0.25 12.5 33 MAX. 700 700 4...
BUJ103A
manufacturer
NXP
Silicon Diffused Power Transistor
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  4 A  hFEsat = 12.5 (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector Simplified outline mb Symbol 2 1 3 sym056 123 SOT78 (TO-220AB) NXP Semiconductors BUJ103A Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type...
BUJ103AU
manufacturer
NXP
Silicon Diffused Power Transistor
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage D.C. current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 12.5 46 MAX. 700 700 400 4 8 50 1.0 60 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 3.0 A...
BUJ103AX
manufacturer
NXP
Silicon Diffused Power Transistor
BUJ103AX High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 12.5 33 MAX. 700 700 400 4 8 26 1.0 80 UNIT V V V A A W V ns Ths ...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy