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HYMD116G725B8-L Hynix Semiconductor Registered DDR SDRAM DIMM Datasheet


Hynix Semiconductor
HYMD116G725B8-L
Part Number HYMD116G725B8-L
Manufacturer Hynix Semiconductor
Description Hynix HYMD116G725B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116G725B(L)8-M/ K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin gla...
Features






• 128MB (16M x 72) Registered DDR DIMM based on 16Mx8 DDR SDRAM JEDEC Standard 184-pin dual in-line memory module (DIMM) Error Check Correction (ECC) Capability Registered inputs with one-clock delay Phase-lock loop (PLL) clock driver to reduce loading 2.5V +/- 0.2V VDD and VDDQ Power supply All inputs and outputs are compatible with SSTL_2 interface






• Fully differential clock operations (CK & /CK) with 100MHz/125MHz/133MHz Programmable CAS Latency 2 / 2.5 supported Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode tRAS Lock-out function suppo...

Document Datasheet HYMD116G725B8-L datasheet pdf (282.08KB)




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Registered DDR SDRAM DIMM
Hynix HYMD116G725B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116G725B(L)8-M/ K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD116G725B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD116G725B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. Whil...
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Registered DDR SDRAM DIMM
Hynix HYMD116G725B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116G725B(L)8-M/ K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD116G725B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD116G725B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. Whil...




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