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SSM3J306T Toshiba Semiconductor Silicon P-Channel MOSFET Datasheet


Toshiba Semiconductor
SSM3J306T
Part Number SSM3J306T
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • 4 V drive • Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating ...
Features bility Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Characteristic Drain
  –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain
  –source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gat...

Document Datasheet SSM3J306T datasheet pdf (197.70KB)




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SSM3J306T(TE85L,F)
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SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2.3 A -4.6 Power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of ...
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SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications • • 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −30 ± 20 −1.7 −3.4 700 150 −55 to 150 Unit V V A mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this...
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SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3 0~0.1 0.15 0.16±0.05 Characteristic Symbol Rating Unit 0.7±0.05 Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -5.0 A Pulse IDP (Note 1) -10 Drain power dissipation PD (Note 2)...




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