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SSM3J304T Toshiba Semiconductor Silicon P-Channel MOSFET Datasheet


Toshiba Semiconductor
SSM3J304T
Part Number SSM3J304T
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS =...
Features aximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 3 JJ2 1 2 Equivalent Circuit (top view) 3 1 2 Start of commercial production 2006-09 1 2014-03-01 SSM3J304T Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutof...

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SSM3J304T(TE85L,F)
P채널 20V 2.3A(Ta) 700mW(Ta) 표면 실장 TSM
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SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3 0~0.1 0.15 0.16±0.05 Characteristic Symbol Rating Unit 0.7±0.05 Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -5.0 A Pulse IDP (Note 1) -10 Drain power dissipation PD (Note 2)...




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