logo

2SC4460 Inchange Semiconductor Silicon NPN Power Transistors Datasheet


Inchange Semiconductor
2SC4460
Part Number 2SC4460
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL...
Features tage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.2A ; VCE= 5V hFE-2 DC Current Gain IC= 6A ; VCE= 5V
 hFE-1 Classifications L M N 15-30 20-40 30-50 MIN TYP. MAX UNIT 500 V 800 V 7 V 1.0 V 1.5 V 10 μA 10 μA 15 50 8 NOTICE: ISC reserves ...

Document Datasheet 2SC4460 datasheet pdf (225.09KB)




2SC4460 Distributor






Similar Datasheet

Part Number Description
2SC4400
manufacturer
Sanyo Semicon Device
NPN Epitaxial Planar Silicon Transistor
Ordering number:EN3195 NPN Epitaxial Planar Silicon Transistor 2SC4400 High-Frequency General-Purpose Amplifier Applications Features · High power gain. · High cutoff frequency. · Small Cob, Cre. · Very small-sized package permitting the 2SC4400- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4400] 0.3 3 0.15 0.2 0~0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Electrical Characteristi...
2SC4401
manufacturer
Sanyo Semicon Device
NPN Epitaxial Planar Silicon Transistor
Ordering number:EN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications · VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. Package Dimensions unit:mm 2059B Features · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA) · Very small-sized package permitting 2SC4401- applied sets to be made smaller and slimmer. 2.1 1.250 0.425 0.425 [2SC4401] 0.3 0.15 3 0.2 0~0.1 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage ...
2SC4402
manufacturer
Sanyo Semicon Device
NPN Transistor
Ordering number:EN2755 NPN Epitaxial Planar Silicon Transistor 2SC4402 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications · VHF/UHF MIX/OSC, low-voltage high-frequency amplifiers. Package Dimensions unit:mm 2059B Features · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) · Very small-sized package permitting 2SC4402- applied sets to be made smaller and slimmer. 2.1 1.250 0.425 0.425 [2SC4402] 0.3 0.15 3 0.2 0~0.1 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage...
2SC4403
manufacturer
Sanyo Semicon Device
NPN Transistor
Ordering number:EN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications · VHF/UHF oscillators. Features · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ (f=0.9GHz) · Small noise figure : NF=2.5dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4403- applied sets to be made smaller and slimmer. 2.1 1.250 0.425 Package Dimensions unit:mm 2059B [2SC4403] 0.3 3 0.15 0.2 0~0.1 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Tempera...
2SC4404
manufacturer
Sanyo Semicon Device
NPN Transistor
Ordering number:EN2757 NPN Epitaxial Planar Silicon Transistor 2SC4404 UHF Local Oscillator, Wide-Band Amplifier Applications Applications · UHF OSC, wide-band amplifiers. Features · High cutoff frequency : fT=5.0GHz typ · High power gain : MAG=14dB typ (f=0.9GHz) · Small noise figure : NF=2.2dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4404- applied sets to be made smaller and slimmer. 2.1 1.250 0.425 Package Dimensions unit:mm 2059B [2SC4404] 0.3 3 0.15 0.2 0~0.1 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector D...
2SC4405
manufacturer
Sanyo Semicon Device
NPN Transistor
Ordering number:EN2758 NPN Epitaxial Planar Silicon Transistor 2SC4405 UHF, Low-Noise, Wide-Band Amplifier Applications Applications · UHF, low-noise amplifiers, wide-band amplifiers. Features · High cutoff frequency : fT=5.0GHz typ · High power gain : MAG=14dB typ (f=0.9GHz) · Small noise figure : NF=1.5dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4405- applied sets to be made smaller and slimmer. 2.1 1.250 0.425 Package Dimensions unit:mm 2059B [2SC4405] 0.3 3 0.15 0.2 0~0.1 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current...
2SC4406
manufacturer
Sanyo Semicon Device
NPN Transistor
Ordering number:EN2759A NPN Epitaxial Planar Silicon Transistor 2SC4406 VHF Frequency Mixer, Local Oscillator Applications Applications · VHF mixer, frequency converters, local oscillators. Features · High cutoff frequency : fT=1.2GHz typ · High power gain : PG=15dB typ (f=0.4GHz) · Good dependence of fT on current. · Very small-sized package permitting 2SC4406- applied sets to be made smaller and slimmer. 2.1 1.250 0.425 Package Dimensions unit:mm 2059B [2SC4406] 0.3 3 0.15 0.2 0~0.1 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colle...
2SC4407
manufacturer
Sanyo Semicon Device
NPN Transistor
Ordering number:EN2760 NPN Epitaxial Planar Silicon Transistor 2SC4407 VHF/UHF Mixer, Local Oscillator Applications Applications · VHF/UHF mixers, frequency converters, local oscillators. Package Dimensions unit:mm 2059B Features · High cutoff frequency : fT=3.0GHz typ · High power gain : PG=12dB typ (f=0.9GHz) · Small noise figure : NF=3.0dB typ (f=0.9GHz) · Very small-sized package permitting 2SC4407- applied sets to be made smaller and slimmer. Specifications 2.1 1.250 0.425 0.425 [2SC4407] 0.3 3 0.15 0.2 0~0.1 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collec...
2SC4408
manufacturer
Toshiba Semiconductor
Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applications 2SC4408 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 500 ns (typ.) • Complementary to 2SA1680 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 50 6 2 0.2 900 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― ...
2SC4409
manufacturer
Toshiba Semiconductor
Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications 2SC4409 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A Collector power dissipation PC 500 mW Collector power dissipation PC (Note 1) 1000 mW Junction tempe...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy