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2SA1304 SavantIC SILICON POWER TRANSISTOR Datasheet


SavantIC
2SA1304
Part Number 2SA1304
Manufacturer SavantIC
Description ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Colle...
Features f current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA , IB=0 IC=-500mA; IB=-50mA IC=-500mA ; VCE=-10V VCB=-120V;IE=0 VEB=-5V; IC=0 IC=-500mA ; VCE=-10V IE=0; VCB=-10V,f=1MHz IC=-500mA ; VCE=-10V 40 55 4 MIN -150 -1.5 -0.85 -10 -10 140 pF MHz TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1304 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor www.DataSheet4U.com Product Specificat...

Document Datasheet 2SA1304 datasheet pdf (179.10KB)




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manufacturer
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Silicon PNP Transistor
: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3280 . Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 2SA1301 Unit in mm 20.5MAX. 0Z.3±&2 | E MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO Vebo ic IB PC T.1 T stg RATING -160 -160 -5 -12 -1.2 UNIT V V V A A 120 W 150 -55-150 °C °C 5.45±Q15 lOO C5 CS +1 \\i X
2SA1301
manufacturer
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SILICON POWER TRANSISTOR
·With TO-3PL package ·Complement to type 2SC3280 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U....
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·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Ra...




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