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AP9971GD Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet


Advanced Power Electronics
AP9971GD
Part Number AP9971GD
Manufacturer Advanced Power Electronics
Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Sourc...
Features nd specifications subject to change without notice 1 200809223 AP9971GD www.DataSheet4U.com Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS=+25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.3Ω,VGS=10V RD=6Ω VGS=0V VDS=25V f=1.0MHz Min. 60 1 - Typ. 0.06 7 32.5 4.9 8.8 9.6 10 30 5.5 1...

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