FDMA1025P |
Part Number | FDMA1025P |
Manufacturer | Fairchild Semiconductor |
Description | July 2014 Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm RoHS Compliant Free... |
Features |
General Description
July 2014
Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm RoHS Compliant Free from halogenated compounds and antimony oxides This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directi... |
Document |
FDMA1025P Data Sheet
PDF 410.05KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMA1023PZ |
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2 | FDMA1023PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
3 | FDMA1024NZ |
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4 | FDMA1024NZ |
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Dual N-Channel MOSFET | |
5 | FDMA1027P |
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Dual P-Channel PowerTrench MOSFET | |
6 | FDMA1027P |
ON Semiconductor |
Dual P-Channel MOSFET |