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2N6052 Motorola DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet

2N6052 Bipolar Transistors - BJT Power BJT


Motorola
2N6052
Part Number 2N6052
Manufacturer Motorola
Description www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6052/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector–...
Features ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCEO VCB VEB IC IB 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Collector
  –Emitter Voltage Collector
  –Base Voltage Emitter
  –Base voltage 5.0 12 20 Collector Current — Continuous Peak Base Current 0.2 Total Device Dissipation @TC = 25_ C Derate above 25_ C PD 150 Watts W/_ C _C DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80
  – 100 VOLTS 150 WATTS 0.857 Operating and Storage Junction Temperat...

Document Datasheet 2N6052 datasheet pdf (162.10KB)
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onsemi
2N6052G
TRANSISTOR, BIPOL, PNP, 100V, TO-3-2
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onsemi
2N6052
트랜지스터 - 양극(BJT) - 단일 PNP - 달링턴 100V 12A 150W 스루홀 TO-204(TO-3)
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Microchip Technology Inc
2N6052
Bipolar Transistors - BJT Power BJT
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Microchip Technology Inc
2N6052
Power BJT _ TO-3, Projected EOL: 2049-02-05
1 units: 50.66 USD
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Microchip Technology Inc

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onsemi
2N6052G
Transistor, Darlington, Si, PNP, Power, Switch, Vo 100VDC, VI 5VDC, Io 12ADC, PD 150W | ON Semiconductor 2N6052G
1 units: 9.77 USD
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RS

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2N6052
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VPT Components
JANTX2N6052
Bipolar Transistors - BJT MIL-PRF-19500/501
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Central Semiconductor Corp
2N6052
Bipolar Junction Transistor, Darlington, PNP Type, TO-3
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Central Semiconductor Corp
2N6052
Transistor Darlington PNP 100V 12A 2-Pin TO-3 Bag - Rail/Tube (Alt: 2N6052)
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Avnet Americas

80 In Stock
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Microchip Technology Inc
JANTX2N6052
Trans GP BJT PNP 100V 12A 2-Pin TO-3 Tray (Alt: JANTX2N6052)
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