logo

BUL118D ST Microelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Datasheet


ST Microelectronics
BUL118D
Part Number BUL118D
Manufacturer STMicroelectronics (https://www.st.com/)
Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in l...
Features (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 3 6 1.5 3 60 -65 to 150 150 Unit V V V A A A A W o o C C December 2002 1/7 BUL118D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.08 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO V EBO VCEO(sus) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter-Base Voltage (I C = 0) Collector-Emitter Sustaining Voltage (I...

Document Datasheet BUL118D datasheet pdf (186.57KB)




BUL118D Distributor






BUL118D Similar Datasheet

Part Number Description
BUL1101E
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature April 2003 Value 11...
BUL1102E
manufacturer
STMicroelectronics
High voltage fast-switching NPN power transistor
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram C (2, TAB) (1) B E (3) Table 1. Device summary Marking BUL1102E BUL1102EFP Package TO-220 TO-220FP Packaging Tube Tube Order codes BUL1102E BUL1102E...
BUL1102E
manufacturer
INCHANGE
NPN Transistor
·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Four lamp electronic ballsat for : 120v mains in push-pull configuration ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCES Collector-Emitter Voltage VBE= 0 1100 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THER...
BUL116D
manufacturer
STMicroelectronics
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collect...
BUL118
manufacturer
STMicroelectronics
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage o (I C = 0, I B <1.5A, tp <10 µ s, Tj < 150 C) Collector Current Collector Peak Current (tp < 5 ms) Base Current ...
BUL118D
manufacturer
Inchange Semiconductor
Silicon NPN Power Transistor
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 3A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 6A 1.5 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 3 60 150 -65~150 A W ℃ ℃ THERM...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy