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UPD44324365 NEC (UPD44324xx5) 36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Datasheet

UPD44324365BF5-E40-FQ1 SRAM - 동기식, DDR II 메모리 IC 36Mb(1M x 36) 병렬 250MHz 165-FBGA(15x17)


NEC
UPD44324365
Part Number UPD44324365
Manufacturer NEC
Description The µPD44324085 is a 4,194,304-word by 8-bit, the µPD44324095 is a 4,194,304-word by 9-bit, the µPD44324185 is a 2,097,152-word by 18-bit and the µPD44324365 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor ...
Features
• 1.8 ± 0.1 V power supply and HSTL I/O
• DLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports
• DDR read or write operation initiated each cycle
• Pipelined double data rate operation
• Separate data input/output bus
• Two-tick burst for low DDR transaction size
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to receiving device
• Internally self-timed write control
• Clock-stop...

Document Datasheet UPD44324365 datasheet pdf (375.99KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
5 units: 85716.6 KRW
BuyNow BuyNow BuyNow (Manufacturer a Rochester Electronics LLC)




UPD44324365 Distributor

part
Rochester Electronics LLC
UPD44324365BF5-E40-FQ1
SRAM - 동기식, DDR II 메모리 IC 36Mb(1M x 36) 병렬 250MHz 165-FBGA(15x17)
5 units: 85716.6 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Renesas Electronics Corporation
UPD44324365BF5-E40-FQ1
DDR SRAM, 1MX36, 0.45ns '
1000 units: 53.03 USD
500 units: 56.15 USD
100 units: 58.64 USD
25 units: 61.14 USD
1 units: 62.39 USD
Distributor
Rochester Electronics

5710 In Stock
BuyNow BuyNow





UPD44324365 Similar Datasheet

Part Number Description
UPD44324362
manufacturer
NEC
(UPD44324xx2) 36M-BIT DDRII SRAM 2-WORD BURST OPERATION
The µPD44324082 is a 4,194,304-word by 8-bit, the µPD44324092 is a 4,194,304-word by 9-bit, the µPD44324182 is a 2,097,152-word by 18-bit and the µPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD44324082, µPD44324092, µPD44324182 and µPD44324362 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. ...
UPD44324364
manufacturer
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(UPD44324xx4) 36M-BIT DDRII SRAM 4-WORD BURST OPERAT
The µPD44324084 is a 4,194,304-word by 8-bit, the µPD44324094 is a 4,194,304-word by 9-bit, the µPD44324184 is a 2,097,152-word by 18-bit and the µPD44324364 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD44324084, µPD44324094, µPD44324184 and µPD44324364 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. ...




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