logo

2N3012 Seme LAB Bipolar PNP Device Datasheet

RG2012N-3012-D-T5 Thin Film Resistors - SMD 1/8W 30.1K Ohms 0.5% 0805 10ppm


Seme LAB
2N3012
Part Number 2N3012
Manufacturer Seme LAB
Description Dimensions in mm (inches). m o .c U 4 t e e h S a at .D w w w 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N3012 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 1 – Emitter Parameter VCEO* IC(CONT) hFE ft Test Condition...
Features conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated 2-Aug-02 ...

Document Datasheet 2N3012 datasheet pdf (39.91KB)
Distributor Distributor
Mouser Electronics
Stock 0 In Stock
Price
1 units: 0.35 USD
10 units: 0.25 USD
50 units: 0.193 USD
100 units: 0.172 USD
500 units: 0.129 USD
1000 units: 0.104 USD
2000 units: 0.099 USD
5000 units: 0.096 USD
10000 units: 0.092 USD
BuyNow (No Longer Stocked Susumu Co Ltd)




2N3012 Distributor

part
Susumu Co Ltd
RG2012N-3012-B-T5
30.1 kOhms ±0.1% 0.125W, 1/8W 칩 저항기 0805(2012 미터법) 황화 방지, 자동차 AEC-Q200 자격 취득 박막
5000 units: 274.8098 KRW
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Susumu Co Ltd
RG2012N-3012-D-T5
Thin Film Resistors - SMD 1/8W 30.1K Ohms 0.5% 0805 10ppm
1 units: 0.35 USD
10 units: 0.25 USD
50 units: 0.193 USD
100 units: 0.172 USD
500 units: 0.129 USD
1000 units: 0.104 USD
2000 units: 0.099 USD
5000 units: 0.096 USD
10000 units: 0.092 USD
Distributor
Mouser Electronics

0 In Stock
No Longer Stocked
part
Motorola Semiconductor Products
2N3012
Bipolar Junction Transistor, NPN Type, TO-18
No price available
Distributor
Quest Components

3 In Stock
BuyNow BuyNow
part
Texas Instruments
2N3012
P-N-P SILICON TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, TO-18
No price available
Distributor
ComSIT Asia

133 In Stock
No Longer Stocked
part
Motorola Semiconductor Products
2N3012
No price available
Distributor
Bristol Electronics

32 In Stock
No Longer Stocked





2N3012 Similar Datasheet

Part Number Description
2N3001
manufacturer
Digitron Semiconductors
SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature...
2N3002
manufacturer
Digitron Semiconductors
SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature...
2N3003
manufacturer
Digitron Semiconductors
SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature...
2N3004
manufacturer
Digitron Semiconductors
SILICON REVERSE BLOCKING THYRISTORS
2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature...
2N3007
manufacturer
Seme LAB
Bipolar NPNP Device
www.DataSheet4U.com 2N3007 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 100 0.35 Units V A Hz W @ (VCE / IC) * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@se...
2N3009
manufacturer
Central Semiconductor Corp
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 ...
2N3009
manufacturer
Motorola
NPN Transistor
2N3009 (SILICON) 2N3013 2N3013JAN AVAILABLE 2N3014 NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications MAXIMUM RATINGS CASE 27 (TO·52) Collector Connected to Case Rating Collector-Emitter Voltage2N3009, 2N3013 2N3014 Collector-Emitter Voltage Symbol VCEO * VCES Collector-Base Voltage VCB Emitter-Base Voltage 2N3009 2N3013. 2N3014 YEB Collector Current - Continuous (lOlls pulse) Peak Total Device DiSSiPation@TA • 25'C Derate above 25' C IC PD Total Device DiSSipation@TC • 25' C @TC = 100'C Derate above 2SoC PD Operating and Storage Junction Temperature Range TJ, Tstg * Applicable from 0.01 mA to 10 mA (Pulsed) ...
2N3010
manufacturer
Motorola
NPN silicon low-power transistor
2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications. Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage* VCEO* Collector-Emitter Voltage VCES Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current - Continuous IC Total Device Dissipation @TA = 25°C Derate above 25° C Operating and Storage Junction Temperature Range PD TJ , Tstg * Applicable from 0.01 mAdc to 10 mAdc (Pulsed). Value 6.0 11 15 4_0 50 0.30 1.71 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc Watt mW/oC °c FIGURE 1 - TURN-ON AND TURN·OFF TIME TEST CIRCUIT Vee = +1.0 V TO OSCILLOSCOPE RISE T...
2N3011
manufacturer
Central Semiconductor
SILICON NPN TRANSISTOR
The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp=10μs) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 30 30 12 5.0 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES ...
2N3011
manufacturer
Seme LAB
Bipolar NPN Device
2N3011 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 12V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maximum Working Voltage Min. Typ. 400M Max. 12 0.2 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact [email protected]. Se...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy