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2SK0123 Panasonic Semiconductor Silicon N-Channel MOSFET Datasheet


Panasonic Semiconductor
2SK0123
Part Number 2SK0123
Manufacturer Panasonic Semiconductor
Description Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ Unit: mm 0.40+0.10 –0.05 ...
Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20
  –0.05 10˚ Unit: mm 0.40+0.10
  –0.05 3 0.16+0.10
  –0.06 1.50+0.25
  –0.05 2.8+0.2
  –0.3 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C 1.1+0.2
  –0.1 (0.65) 0 to 0.1 1.1+0.3
  –0.1 1: Drain 2: Sou...

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2SK0198
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Silicon N-Channel MOSFET
Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification 0.40+0.10 –0.05 Unit: mm 0.16+0.10 –0.06 s Features q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 3 1.50+0.25 –0.05 2.8+0.2 –0.3 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO ID IG PD Tch Tstg 30 −30 20 10 150 150 −55 to +150 V V mA mA mW °C °C 1: Source 2: Drain 3: Gate 0 to 0.1 Parameter ...




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