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STD2NB25 ST Microelectronics N-CHANNEL MOSFET Datasheet

STD2NB25-1 N-CHANNEL 250V-1.7OHM-2A POWERMESH MOSFET Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251


ST Microelectronics
STD2NB25
Part Number STD2NB25
Manufacturer STMicroelectronics (https://www.st.com/)
Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona...
Features I DM (
• ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 250 250 ± 20 2 1.25 8 40 0.32 6 -65 to 150 150 ( 1) ISD ≤2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/9 (
•) Pulse width limited by safe operating area October ...

Document Datasheet STD2NB25 datasheet pdf (274.94KB)
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part
SGS Semiconductor Ltd
STD2NB25-1
N-CHANNEL 250V-1.7OHM-2A POWERMESH MOSFET Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
No price available
Distributor
ComSIT Asia

600 In Stock
No Longer Stocked
part
STMicroelectronics
STD2NB25T4
No price available
Distributor
Bristol Electronics

1786 In Stock
No Longer Stocked





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