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STD2NB60 ST Microelectronics N-CHANNEL MOSFET Datasheet


ST Microelectronics
STD2NB60
Part Number STD2NB60
Manufacturer STMicroelectronics (https://www.st.com/)
Description Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala...
Features Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt( 1 ) T stg Tj March 1998 Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 600 600 ± 30 2.6 1.6 10.4 50 0.4 4.5 -65 to 150 150 (1) ISD ≤2.6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/9 (
•) Pulse width limited by safe operating area STD2NB60 THERMAL DATA R thj-case Rthj-amb R thc-...

Document Datasheet STD2NB60 datasheet pdf (291.37KB)




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