logo

STD2NB80 ST Microelectronics N-CHANNEL MOSFET Datasheet

STD2NB80T4 N-CHANNEL 800V-4.6 OHM-1.9A POWERMESH MOSFET Power Field-Effect Transistor, 1.9A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA


ST Microelectronics
STD2NB80
STD2NB80
Part Number STD2NB80
Manufacturer STMicroelectronics (https://www.st.com/)
Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona...
Features mbol V DS V DGR V GS ID ID I DM (
• ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 800 800 ± 30 1.9 1.2 7.6 55 0.44 4.5 -65 to 150 150 ( 1) ISD ≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/9 (
•) Pulse width limited...

Document Datasheet STD2NB80 datasheet pdf (92.22KB)
Distributor Distributor
ComSIT Asia
Stock 560 In stock
Price
No price available
BuyNow (No Longer Stocked STMicroelectronics)




STD2NB80 Distributor

part
STMicroelectronics
STD2NB80T4
N-CHANNEL 800V-4.6 OHM-1.9A POWERMESH MOSFET Power Field-Effect Transistor, 1.9A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
No price available
Distributor
ComSIT Asia

560 In stock
No Longer Stocked
part
STMicroelectronics
STD2NB80T4
INSTOCK
No price available
Distributor
Chip 1 Exchange

2403 In stock
No Longer Stocked





Similar Datasheet

Part Number Description
STD2NB25
manufacturer
ST Microelectronics
N-CHANNEL MOSFET
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (• ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-sourc...
STD2NB40
manufacturer
ST Microelectronics
N-CHANNEL MOSFET
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (• ) P tot dv/dt Tstg Tj July 1999 Parameter Drain-...
STD2NB50
manufacturer
ST Microelectronics
N-CHANNEL MOSFET
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Dra...
STD2NB60
manufacturer
ST Microelectronics
N-CHANNEL MOSFET
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot Parameter Drain-sour...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy