logo

SFH320 Siemens Semiconductor Group Silicon NPN Phototransistor Datasheet

SFH 320-3/4-Z Phototransistor 980nm 상면도 2-PLCC


Siemens Semiconductor Group
SFH320
Part Number SFH320
Manufacturer Siemens Semiconductor Group
Description Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-B...
Features q Especially suitable for applications from q q q q Bereich von 380 nm bis 1150 nm (SFH 320) und bei 880 nm (SFH 320 FA) Hohe Linearität P-LCC-2 Gehäuse Gruppiert lieferbar für alle Lötverfahren geeignet q q q q 380 nm to 1150 nm (SFH 320) and of 880 nm (SFH 320 FA) High linearity P-LCC-2 package Available in groups Suitable for all soldering methods Anwendungen q Miniaturlichtschranken für Gleich- und Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/Steuern/Regeln” Semiconductor Group 1 Miniature photointerrupters punched tape readers Indust...

Document Datasheet SFH320 datasheet pdf (188.88KB)
Distributor Distributor
DigiKey
Stock 1642 In Stock
Price
1000 units: 311.98 KRW
100 units: 404.04 KRW
10 units: 610.2 KRW
1 units: 923 KRW
BuyNow BuyNow BuyNow (Manufacturer a ams OSRAM Group)




SFH320 Distributor

part
ams OSRAM Group
SFH 3201
PHOTOTRANSISTOR, 120MW, 120DEG, SMD
250 units: 856 KRW
200 units: 874 KRW
150 units: 892 KRW
100 units: 910 KRW
50 units: 1017 KRW
25 units: 1123 KRW
10 units: 1229 KRW
5 units: 1849 KRW
Distributor
element14 Asia-Pacific

4 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 320-3/4-Z
Phototransistor 980nm 상면도 2-PLCC
1000 units: 311.98 KRW
100 units: 404.04 KRW
10 units: 610.2 KRW
1 units: 923 KRW
Distributor
DigiKey

1642 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 3204-Z
Phototransistor Chip Silicon 980nm 2-Pin PLCC (Alt: SFH 320-4-Z)
200000 units: 0.15559 USD
100000 units: 0.15934 USD
40000 units: 0.16327 USD
20000 units: 0.16741 USD
12000 units: 0.16955 USD
8000 units: 0.17175 USD
4000 units: 0.17401 USD
Distributor
Avnet Asia

0 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 320
Phototransistors SFH 320-Z
1 units: 0.55 USD
10 units: 0.365 USD
100 units: 0.241 USD
1000 units: 0.186 USD
2000 units: 0.168 USD
10000 units: 0.151 USD
24000 units: 0.149 USD
50000 units: 0.143 USD
Distributor
Mouser Electronics

6566 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 320
Phototransistor Chip Silicon 980nm Automotive AEC-Q101 2-Pin PLCC
50000 units: 0.1283 USD
24000 units: 0.135 USD
10000 units: 0.1383 USD
4000 units: 0.1554 USD
Distributor
Arrow Electronics

50000 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 320 FA-4-Z
Phototransistor,TOPLED,SFH 320 FA-4, RL
1000 units: 3.456 HKD
500 units: 3.532 HKD
250 units: 4.057 HKD
100 units: 4.156 HKD
Distributor
RS

5310 In Stock
BuyNow BuyNow
part
OSRAM Opto Semiconductors
SFH320-Z
34000 units: 0.28 USD
10900 units: 0.291 USD
4200 units: 0.304 USD
1000 units: 0.316 USD
200 units: 0.329 USD
Distributor
Onlinecomponents.com

3840 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 320
Phototransistor Chip Silicon 980nm Automotive AEC-Q101 2-Pin PLCC
2000 units: 0.1925 USD
Distributor
Verical

50000 In Stock
BuyNow BuyNow
part
ams OSRAM Group
SFH 320 FA-4-Z
SFH320 - Silicon NPN Phototransistor in SMT Package
1000 units: 0.164 USD
500 units: 0.1736 USD
100 units: 0.1813 USD
25 units: 0.189 USD
1 units: 0.1929 USD
Distributor
Rochester Electronics

2000 In Stock
BuyNow BuyNow
part
ams OSRAM Group
Q65110A2470
Phototransistors PHOTOTRANSISTOR
2000 units: 0.225 USD
10000 units: 0.22 USD
Distributor
TTI

4000 In Stock
BuyNow BuyNow





SFH320 Similar Datasheet

Part Number Description
SFH300
manufacturer
Siemens Semiconductor Group
.NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS VEC 35 50 100 7 V mA mA V S...
SFH3010
manufacturer
OSRAM
Silicon NPN Phototransistor
Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 3010   SFH 3010 SMARTLED® Silicon NPN Phototransistor (not for new design in automotive applications) Applications ——Access Control (IRIS/Vein Scan, Face Recognition) ——Electronic Equipment ——Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Features: ——Package: Epoxy, diffuse ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Very small package: (LxWxH) 1.7 mm x 0.8 mm x 0.65 mm ——Large viewing angle ± 80° ——Available on tape and reel ——Spectral range of sensitivity: (typ) 420 ... 1100 nm Ordering Information  Type Photocurrent  VCE = 5 V; λ = 950 nm; Ee = 0.5 mW/cm² IPCE SFH 3010-Z ≥ 25 µA Ordering Code Q65110A64...
SFH3015FA
manufacturer
OSRAM
Silicon PIN Photodiode
Emitter Collector 8 Version 1.6 | 2020-11-20  SFH 3015 FA   Recommended Solder Pad 6) Reflow Soldering Profile Product complies to MSL Level 3 acc. to JEDEC J-STD-020E 300 ˚C T 250 240 ˚C 217 ˚C tP 200 tL 150 tS 100 OHA04525 Tp 245 ˚C 50 25 ˚C 0 0 50 100 150 200 250 s 300 t 9 Version 1.6 | 2020-11-20  SFH 3015 FA   Profile Feature Symbol Ramp-up rate to preheat*) 25 °C to 150 °C Time tS tS TSmin to TSmax Ramp-up rate to peak*) TSmax to TP Liquidus temperature TL Time above liquidus temperature tL Peak temperature TP Time within 5 °C of the specified peak tP temperature TP - 5 K Ramp-down rate* TP to 100 °C Time 25 °C to TP Pb-Free (SnAgCu...
SFH302
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 ... + 80...
SFH303
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Basisspannung Emitter-base voltage Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS VEB 50 50 100 7 V mA ...
SFH305
manufacturer
Siemens Semiconductor Group
Mini-Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 40 ... + 80 230 Einheit Unit °C °C Top; Tstg TS TS ...
SFH309
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS 300 °C VCE IC ICS 35 15 75 V mA mA Semiconductor Group 2 SFH 309 SFH 309 FA Gr...
SFH309P
manufacturer
Siemens Semiconductor Group
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit Top; Tstg TS °C °C TS...
SFH310
manufacturer
Siemens Semiconductor Group
Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 55 ... + 100 260 Einheit Unit °C °C Top; Tstg TS TS ...
SFH313
manufacturer
Siemens Semiconductor Group
.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom t ≤ 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 55 ... + 100 260 E...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy