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MGF1801BT Mitsubishi High-power GaAs FET Datasheet


Mitsubishi
MGF1801BT
Part Number MGF1801BT
Manufacturer Mitsubishi
Description The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in th...
Features
 High linear power gain Glp=9.0dB @f=8GHz
 High P1dB P1dB=23dBm(TYP.) @f=8GHz
 High reliability and stability APPLICATION
 S to X Band medium-power amplifiers and oscillators QUALITY
 IG RECOMMENDED BIAS CONDITION
 VDS=6V,Id=100mA Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Gate to source breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature -8 -8 250 -0.6 1.5 1.2 175 -65...

Document Datasheet MGF1801BT datasheet pdf (109.64KB)




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MGF1801BT Similar Datasheet

Part Number Description
MGF1801B
manufacturer
Mitsubishi
MICROWAVE POWER GaAs FET
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=23dBm(TYP.) • High linear power gain GLP=9dB(TYP.) • High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE • IG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA • Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN ...




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