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MGF1801B Mitsubishi MICROWAVE POWER GaAs FET Datasheet


Mitsubishi
MGF1801B
Part Number MGF1801B
Manufacturer Mitsubishi
Description The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:...
Features
• High output power at 1dB gain compression P1dB=23dBm(TYP.)
• High linear power gain GLP=9dB(TYP.)
• High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE
• IG RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
• Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25˚C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel t...

Document Datasheet MGF1801B datasheet pdf (23.07KB)




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MGF1801B Similar Datasheet

Part Number Description
MGF1801BT
manufacturer
Mitsubishi
High-power GaAs FET
The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. The MGF1801BT is mounted in the super 24 tape. FEATURES  High linear power gain Glp=9.0dB @f=8GHz  High P1dB P1dB=23dBm(TYP.) @f=8GHz  High reliability and stability APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  IG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Ga...




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