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MGF1601B Mitsubishi MICROWAVE POWER GaAs FET Datasheet


Mitsubishi
MGF1601B
Part Number MGF1601B
Manufacturer Mitsubishi
Description The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:...
Features
• High output power at 1dB gain compression P1dB=21.8dBm(TYP.)
• High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 3 QUALITY GRADE
• GG RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
• Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25˚C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature ...

Document Datasheet MGF1601B datasheet pdf (26.03KB)




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MGF1601
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MGF1601B-01
manufacturer
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High-power GaAs FET
The MGF1601B-01, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits. FEATURES  High linear power gain Glp=8.0dB @f=8GHz  High P1dB P1dB=21.8dBm(TYP.) @f=8GHz APPLICATION  S to X Band medium-power amplifiers and oscillators QUALITY  GG RECOMMENDED BIAS CONDITION  VDS=6V,Id=100mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO VGSO ID IGR IGF PT Tch Tstg Gate to drain breakdown voltage Gate to source breakdown voltage Drain current Reverse...




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