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PHN1011 NXP TrenchMOS transistor Logic level FET Datasheet


NXP
PHN1011
Part Number PHN1011
Manufacturer NXP (https://www.nxp.com/)
Description N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c. to d.c. converter...
Features
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• High thermal cycling performance
• Low-profile surface mount package
• Logic level compatible PHN1011 SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 11 A g RDS(ON) ≤ 11 mΩ (VGS = 10 V) RDS(ON) ≤ 13.5 mΩ (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c. to d.c. ...

Document Datasheet PHN1011 datasheet pdf (115.61KB)




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