logo

BU806 Fairchild Semiconductor Transistor Datasheet

BU806 트랜지스터 - 양극(BJT) - 단일 NPN - 달링턴 200V 8A 60W 스루홀 TO-220


Fairchild Semiconductor
BU806
BU806
Part Number BU806
Manufacturer Fairchild Semiconductor
Description BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=...
Features Saturation Voltage * Damper Diode Forward Voltage Test Condition IC = 100mA, IB = 0 Min. 200 150 100 100 100 100 3 1.5 2.4 2 Max. Units V V µA µA µA µA mA V V V ICES VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A ICEV IEBO VCE(sat) VBE(sat) VF * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 Ic = 100 IB hFE, DC CURRENT GAIN VBE(s...

Document Datasheet BU806 datasheet pdf (41.34KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
No price available
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




BU806 Distributor

part
SPC Multicomp
BU806
DARLINGTON TRANSISTOR, TO-220
250 units: 1823 KRW
100 units: 2019 KRW
25 units: 2281 KRW
10 units: 2572 KRW
1 units: 2790 KRW
Distributor
element14 Asia-Pacific

3941 In Stock
BuyNow BuyNow
part
STMicroelectronics
BU806
트랜지스터 - 양극(BJT) - 단일 NPN - 달링턴 200V 8A 60W 스루홀 TO-220
No price available
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Diodes Incorporated
GBU806_HF
Diode Rectifier Bridge Single 600V 8A 4-Pin GBU Tube (Alt: GBU806_HF)
50000 units: 0.49306 USD
25000 units: 0.50494 USD
10000 units: 0.51741 USD
5000 units: 0.53051 USD
3000 units: 0.53731 USD
2000 units: 0.54429 USD
1000 units: 0.55145 USD
Distributor
Avnet Asia

1000 In Stock
BuyNow BuyNow
part
Comchip Technology Corporation Ltd
GBU806-G
Bridge Rectifiers BRIDG GBU 8A 600V
1 units: 1.5 USD
10 units: 1.23 USD
100 units: 0.97 USD
500 units: 0.896 USD
1000 units: 0.857 USD
2500 units: 0.816 USD
5000 units: 0.777 USD
10000 units: 0.741 USD
Distributor
Mouser Electronics

145 In Stock
BuyNow BuyNow
part
Steel City
BU806
Bushing, Insulated Conduit, 2 Inch, Die-Cast Zinc | Steel City by ABB BU806
25 units: 13.49 USD
125 units: 12.95 USD
250 units: 12.56 USD
500 units: 12.14 USD
Distributor
RS

0 In Stock
No Longer Stocked
part
Thomas & Betts
BU806
Bushing - Insulated Conduit - Trade Size 2 Inches - Width 2.68 Inch - Thickness 0.56 Inch - Die-Cast Zinc.
1000 units: 9.68 USD
500 units: 9.82 USD
250 units: 10.1 USD
100 units: 10.71 USD
50 units: 11.04 USD
25 units: 11.58 USD
5 units: 12.81 USD
Distributor
Onlinecomponents.com

0 In Stock
BuyNow BuyNow
part
Hewlett Packard Co
BU806
Bipolar Junction Transistor, Darlington, NPN Type, TO-220AB
9 units: 0.55 USD
1 units: 0.66 USD
Distributor
Quest Components

25 In Stock
BuyNow BuyNow
part
SMC Diode Solutions
GBU806TB
Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 150A
500 units: 0.323 USD
100 units: 0.347 USD
20 units: 0.437 USD
5 units: 0.486 USD
1 units: 0.741 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
Diodes Incorporated
GBU806
8.0 A GLASS PASSIVATED BRIDGE RECTIFIER Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon
No price available
Distributor
ComSIT Asia

340 In Stock
No Longer Stocked
part
World Products Inc
GBU806
Bridge Rectifier Diode, 1 Phase, 8A, 600VV(RRM), Silicon
1000 units: 0.571 USD
250 units: 0.678 USD
1 units: 0.93 USD
Distributor
NAC

0 In Stock
BuyNow BuyNow





BU806 Similar Datasheet

Part Number Description
BU800
manufacturer
INCHANGE
NPN Transistor
·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperatu...
BU801
manufacturer
ST Microelectronics
High Voltage Fast Darlington
...
BU806
manufacturer
Motorola Inc
8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU806/D NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Damper Diode VF is specified. VF = 2.0 V (max) BU806 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ...
BU806
manufacturer
ON Semiconductor
NPN Darlington Power Transistor
ON Semiconductort NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Damper Diode VF is specified. VF = 2.0 V (max) BU806 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS CASE 221A–09 TO–220AB MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Volt...
BU806
manufacturer
ST Microelectronics
MEDIUM VOLTAGE NPN TRANSISTORS
te cThe devices are silicon Epitaxial Planar NPN le upower transistors in Darlington configuration with dintegrated base-emitter speed-up diode, mounted so roin TO-220 plastic package. b PThey can be used in horizontal output stages of ) - O lete110 oCRT video displays. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM solete Prroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS b PSymbol Parameter O leteVCBO oVCEV bsVCEO O VEBO Collector-base Voltage (IE = 0) Collector-emitter Voltage (VBE = -6V) Collector-emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) BU806 400 400 200 Value 6 BU807 330 330 150 Unit V V V V IC Collector Current 8A ICM Collector Peak Current 15 A IDM Damper Diode P...
BU806
manufacturer
Comset Semiconductors
Silicon Darlington Power Transistors
SEMICONDUCTORS BU806 SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEV VCEO VEBO IC ICM IB PT tJ ts Collector-Base Voltage Ratings Value 400 400 200 www.DataSheet.net/ Unit V Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at Case Temperature Junction Temperature Storage Temperature range Tmb < 25°C V V A A A W °C 6 8 15 2 60 150 -65 to +150 T...
BU806
manufacturer
NTE
Silicon NPN Transistor
The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO−220 type package with an integrated base−emitter speed−up diode designed for use in high voltage, high current, fast switching applications. In particular, the BU806 can be used in horizontal output stages of 110 CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (VBE = −6V), VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (IB = 0), ...
BU806
manufacturer
Central Semiconductor
NPN SILICON DARLINGTON TRANSISTOR
The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA ΘJC BU806 400 BU807 330 400 330 200 150 6.0 8.0 15 2.0 60 -65 to +150 70 2.08 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted...
BU806
manufacturer
INCHANGE
Silicon NPN Darlington Power Transistor
·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak 15 A IBB Base Current Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2 60 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to ...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy