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TIP101 ON Semiconductor Plastic Medium-Power Complementary Silicon Transistors Datasheet

TIP102G Darlington Transistors 8A 100V Bipolar Power NPN


ON Semiconductor
TIP101
Part Number TIP101
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @...
Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available* www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 80 WATTS MARKING DIAGRAM 12 3 4 TO−220AB CASE 221A STYLE 1 STYLE 1: PI...

Document Datasheet TIP101 datasheet pdf (123.77KB)
Distributor Distributor
Mouser Electronics
Stock 12133 In Stock
Price
1 units: 1.46 USD
10 units: 1.18 USD
100 units: 0.974 USD
500 units: 0.825 USD
1000 units: 0.643 USD
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




TIP101 Distributor

part
SPC Multicomp
TIP101
TRANSISTOR,NPN,8A,80V,TO220
5000 units: 953 KRW
1000 units: 1025 KRW
500 units: 1130 KRW
250 units: 1251 KRW
100 units: 1413 KRW
25 units: 1593 KRW
5 units: 1728 KRW
Distributor
element14 Asia-Pacific

77 In Stock
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part
Central Semiconductor Corp
TIP101
트랜지스터 - 양극(BJT) - 단일 NPN - 달링턴 80V 8A 4MHz 80W 스루홀 TO-220-3
No price available
Distributor
DigiKey

0 In Stock
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part
onsemi
TIP102G
Darlington Transistors 8A 100V Bipolar Power NPN
1 units: 1.46 USD
10 units: 1.18 USD
100 units: 0.974 USD
500 units: 0.825 USD
1000 units: 0.643 USD
Distributor
Mouser Electronics

12133 In Stock
BuyNow BuyNow
part
NTE Electronics Inc
TIP101
Electronics TIP101 Transistor NPN Silicon Darlington 80V IC=8A TO-220 Case With Base-ter Shunt Resistors
10000 units: 0.814 USD
7500 units: 0.827 USD
5000 units: 0.84 USD
2500 units: 0.863 USD
1000 units: 0.901 USD
500 units: 0.927 USD
250 units: 0.986 USD
25 units: 1.24 USD
Distributor
Onlinecomponents.com

180 In Stock
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part
NTE Electronics Inc
TIP101
Silicon NPN Darlington Power Amp, Switch
2500 units: 1.1219 USD
1000 units: 1.1713 USD
500 units: 1.2051 USD
250 units: 1.2818 USD
50 units: 1.612 USD
Distributor
Verical

175 In Stock
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part
onsemi
TIP101G
TIP101 - Power Bipolar Transistor, 8A, 80V, NPN, TO-220AB, 3 Pin
1000 units: 0.4808 USD
500 units: 0.5091 USD
100 units: 0.5318 USD
25 units: 0.5544 USD
1 units: 0.5657 USD
Distributor
Rochester Electronics

35 In Stock
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part
onsemi
TIP101
Bipolar Junction Transistor, Darlington, NPN Type, TO-220AB
1 units: 0.72 USD
Distributor
Quest Components

6 In Stock
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part
onsemi
TIP101G
Transistor: NPN; bipolar; Darlington; 80V; 8A; 2W; TO220AB
250 units: 0.62 USD
50 units: 0.675 USD
10 units: 0.74 USD
3 units: 0.838 USD
1 units: 1.24 USD
Distributor
TME

76 In Stock
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part
Motorola Semiconductor Products
TIP101
Bipolar BJT Transistor NPN Darlington 80V 8A 2W Through Hole TO-220AB
1 units: 0.69 USD
10 units: 0.59 USD
100 units: 0.49 USD
Distributor
Jameco Electronics

376 In Stock
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part
Central Semiconductor Corp
TIP101
Transistor Darlington NPN 80V 8A 3-Pin TO-220AB Box - Boxed Product (Development Kits) (Alt: TIP101)
No price available
Distributor
Avnet Americas

0 In Stock
No Longer Stocked





TIP101 Similar Datasheet

Part Number Description
TIP100
manufacturer
SemiHow
NPN Epitaxial Silicon Transistor
TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP100 : TIP101 : TIP102 VCBO 60 80 100 V V V Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 VCEO 60 80 100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=...
TIP100
manufacturer
TAITRON
Darlington NPN Power Transistors
TIP100 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current Continuous ICM Collector Current Peak IB Base Current Power Dissipation upto TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA Thermal Resistance from Junction to Ambient in Free Air RθJC Thermal Resistance from Junction to Case TJ, TSTG Operating Junction and Storage Temperature Range TIP101 80 80 5.0 8.0 15 1.0 80 2.0 16 62.5 1.56 -65 to +150 TIP102 100 100 Unit V V V A A A W W mW/° C ° C /W ° C /...
TIP100
manufacturer
Motorola
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP100, T...
TIP100
manufacturer
ON Semiconductor
Plastic Medium-Power Complementary Silicon Transistors
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER T...
TIP100
manufacturer
Power Innovations Limited
NPN SILICON POWER DARLINGTONS
TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25°C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP100 Collector-base voltage (IE = 0) TIP101 TIP102 TIP100 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current ...
TIP100
manufacturer
Fairchild Semiconductor
NPN Epitaxial Silicon Darlington Transistor
TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 @ 10kW R2 @ 0.6kW R2 E Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage : TIP100 : TIP101 : TIP102 Collector-Emitter Voltage : TIP100 : TIP101 : ...
TIP100
manufacturer
CDIL
NPN PLASTIC POWER TRANSISTORS
Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Operating And Storage Junction Temperature VEBO IC ICM IB PD PD Tj , Tstg TIP100/105 60 60 TIP101/106 80 80 5 8 15 1 80 2 16 - 65 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 1.56 62.5 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut Off Current ICEO VCE=30V, IB=0 VCE=40V, IB=0 TIP100/105 TIP101/106 VCE=50V, IB=0 TIP102/107 Collector Cut ...
TIP100
manufacturer
MCC
NPN Plastic Medium-Power Silicon Transistors
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compact package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings Symbol Parameter Rating Unit VCEO Collector-Emitter Voltage TIP100 TIP101 TIP102 60 80 100 V VCBO Collector-Base Voltage TIP100 TIP101 60 8...
TIP100
manufacturer
Comset Semiconductors
(TIP100 - TIP102) Silicon NPN Darlington Power Transistors
SEMICONDUCTORS NPN TIP100-101-102 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 Value 60 80 100 60 80 100 5 Unit V VCEO Collector-Emitter Voltage http://www.DataSheet4U.net/ V VEBO ...
TIP100
manufacturer
INCHANGE
NPN Transistor
·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A ·Complement to Type TIP105 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Collector P...




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