logo

FDS6690A Fairchild Semiconductor Single N-Channel / Logic Level / PowerTrench MOSFET Datasheet

FDS6690A MOSFETs SO-8 SGL N-CH 30V


Fairchild Semiconductor
FDS6690A
Part Number FDS6690A
Manufacturer Fairchild Semiconductor
Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered a...
Features
• 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) EAS TJ, TSTG Single Pulse Avalanche Energy (Note 3) Operating an...

Document Datasheet FDS6690A datasheet pdf (314.57KB)
Distributor Distributor
Mouser Electronics
Stock 15200 In Stock
Price
1 units: 0.78 USD
10 units: 0.696 USD
100 units: 0.474 USD
500 units: 0.396 USD
1000 units: 0.337 USD
2500 units: 0.306 USD
5000 units: 0.299 USD
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




FDS6690A Distributor

part
onsemi
FDS6690A
MOSFET, N, SO-8
500 units: 597 KRW
100 units: 706 KRW
Distributor
element14 Asia-Pacific

15585 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
N채널 30V 11A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
1000 units: 487.183 KRW
500 units: 572.434 KRW
100 units: 685.18 KRW
10 units: 989.5 KRW
1 units: 1140 KRW
Distributor
DigiKey

506 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: FDS6690A)
125000 units: 0.22353 USD
62500 units: 0.22892 USD
25000 units: 0.23457 USD
12500 units: 0.24051 USD
7500 units: 0.24675 USD
5000 units: 0.25333 USD
2500 units: 0.27143 USD
Distributor
Avnet Asia

0 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
MOSFETs SO-8 SGL N-CH 30V
1 units: 0.78 USD
10 units: 0.696 USD
100 units: 0.474 USD
500 units: 0.396 USD
1000 units: 0.337 USD
2500 units: 0.306 USD
5000 units: 0.299 USD
Distributor
Mouser Electronics

15200 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
5 units: 0.455 USD
10 units: 0.384 USD
50 units: 0.372 USD
100 units: 0.334 USD
200 units: 0.322 USD
500 units: 0.307 USD
1000 units: 0.294 USD
Distributor
Chip1Stop

2385 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
5000 units: 0.3247 USD
2500 units: 0.3323 USD
Distributor
Verical

10000 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
N-Channel 30 V 12.5 mΩ Surface Mount PowerTrench Mosfet - SOIC-8
1250 units: 0.475 USD
250 units: 0.53 USD
75 units: 0.575 USD
15 units: 0.63 USD
1 units: 0.73 USD
Distributor
Future Electronics

12 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDS6690AS
Small Signal Field-Effect Transistor, 10A, 30V, N-Channel, MOSFET
1000 units: 0.347 USD
500 units: 0.3674 USD
100 units: 0.3837 USD
25 units: 0.4 USD
1 units: 0.4082 USD
Distributor
Rochester Electronics

101356 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDS6690A
MOSFET Transistor, N-Channel, SO
44 units: 0.375 USD
10 units: 0.4688 USD
1 units: 0.5625 USD
Distributor
Quest Components

153 In Stock
BuyNow BuyNow
part
onsemi
FDS6690A
Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
1000 units: 0.36 USD
500 units: 0.367 USD
100 units: 0.457 USD
10 units: 0.586 USD
1 units: 0.731 USD
Distributor
TME

1663 In Stock
BuyNow BuyNow





FDS6690A Similar Datasheet

Part Number Description
FDS6690
manufacturer
Fairchild Semiconductor
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.0200 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching . Low gate charge (Qg typ = 13 nC). SOT-23 SuperSOTTM-6 SuperS...
FDS6690A
manufacturer
ON Semiconductor
N-Channel MOSFET
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwis...
FDS6690AS
manufacturer
Fairchild Semiconductor
30V N-Channel PowerTrench SyncFET
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. tm Features • 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V • • • Includes SyncFET Schottky diode Low gate charge (16nC typical) High performance trench technology for extremel...
FDS6690AS
manufacturer
ON Semiconductor
N-Channel MOSFET
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. • 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky diode • Low gate charge (16nC typical) • High performance trench technology for extremely low ...
FDS6690S
manufacturer
Fairchild Semiconductor
30V N-Channel PowerTrench SyncFET
The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. Features • 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V • Includes SyncFET Schottky diode • Low gate charge (11 nC typical) • High performance trench technology for extremely low...
FDS6692
manufacturer
Fairchild Semiconductor
30V N-Channel PowerTrench MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 12 A, 30 V. RDS(ON) = 12 mΩ @ V GS = 10 V. RDS(ON) = 14.5 mΩ @ V GS = 4.5 V Applications • DC/DC converter • High performance trench technology for extremely low RDS(ON) • Low gate charge (18 nC typical) • High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed T A=25oC...
FDS6692A
manufacturer
Fairchild Semiconductor
N-Channel PowerTrench MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. „ High power and current handling capability „ RoHS Compliant Applications „ DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, Rθ...
FDS6694
manufacturer
Fairchild Semiconductor
30V N-Channel Fast Switching PowerTrench MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 12 A, 30 V. RDS(ON) = 11 mΩ @ V GS = 10 V RDS(ON) = 13.5 mΩ @ V GS = 4.5 V • Low gate charge (13 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. Applications • DC/DC converter • Power management • Load switch D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol V DSS V GSS ID...
FDS6699S
manufacturer
Fairchild Semiconductor
MOSFET
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. D D D D SO-8 G SS S 54 63 72 81 Absolute Maximum Ratings TA=25°C unless otherwise noted S...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy