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FDS3670 Fairchild Semiconductor N-Channel MOSFET Datasheet

FDS3670 FDS3670 - Small Signal Field-Effect Transistor, 6.3A, 100V, N-Channel MOSFET '


Fairchild Semiconductor
FDS3670
FDS3670
Part Number FDS3670
Manufacturer Fairchild Semiconductor
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The r...
Features
• 6.3 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (57 nC typical).
• Fast switching speed
• High performance trench technology for extremely low RDS(ON) .
• High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±20 (Note 1a) Units V V A W 6.3 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b)...

Document Datasheet FDS3670 datasheet pdf (204.16KB)
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Rochester Electronics
Stock 28575 In Stock
Price
1000 units: 1.44 USD
500 units: 1.53 USD
100 units: 1.59 USD
25 units: 1.66 USD
1 units: 1.7 USD
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FDS3670 Distributor

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onsemi
FDS3670
N채널 100V 6.3A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
5000 units: 2091.596 KRW
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Fairchild Semiconductor Corporation
FDS3670
FDS3670 - Small Signal Field-Effect Transistor, 6.3A, 100V, N-Channel MOSFET '
1000 units: 1.44 USD
500 units: 1.53 USD
100 units: 1.59 USD
25 units: 1.66 USD
1 units: 1.7 USD
Distributor
Rochester Electronics

28575 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDS3670
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.3A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
116 units: 2.0119 USD
32 units: 2.175 USD
1 units: 3.2625 USD
Distributor
Quest Components

200 In Stock
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