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FDS3580 Fairchild Semiconductor N-Channel MOSFET Datasheet

FDS3580 N채널 80V 7.6A(Ta) 2.5W(Ta) 표면 실장 8-SOIC


Fairchild Semiconductor
FDS3580
Part Number FDS3580
Manufacturer Fairchild Semiconductor
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The r...
Features
• 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V.



• Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 80 (Note 1a) Units V V A W ±20 7.6 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note...

Document Datasheet FDS3580 datasheet pdf (201.66KB)
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DigiKey
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12500 units: 843.6638 KRW
5000 units: 884.4884 KRW
2500 units: 928.7092 KRW
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FDS3580 Distributor

part
onsemi
FDS3580
N채널 80V 7.6A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
12500 units: 843.6638 KRW
5000 units: 884.4884 KRW
2500 units: 928.7092 KRW
Distributor
DigiKey

12500 In Stock
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part
onsemi
FDS3580
MOSFETs SO-8 N-CH 80V
1 units: 1.15 USD
10 units: 1.02 USD
100 units: 0.892 USD
500 units: 0.827 USD
1000 units: 0.683 USD
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Mouser Electronics

2231 In Stock
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onsemi
FDS3580
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC T/R
2500 units: 1.0256 USD
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Verical

2500 In Stock
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onsemi
FDS3580
N-Channel 80 V 29 mOhm PowerTrench Mosfet SOIC-8
5000 units: 0.6 USD
2500 units: 0.625 USD
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Future Electronics

2500 In Stock
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onsemi
FDS3580
POWER MOSFET TRANSISTOR
2500 units: 0.58 USD
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FDS3580
INSTOCK
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Chip 1 Exchange

2469 In Stock
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onsemi
FDS3580
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3580)
250000 units: 0.57908 USD
25000 units: 0.59776 USD
20000 units: 0.61644 USD
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10000 units: 0.6538 USD
5000 units: 0.67248 USD
2500 units: 0.69116 USD
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Avnet Americas

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FDS3580
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC N T/R (Alt: FDS3580)
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Avnet Silica

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onsemi
FDS3580
Trans MOSFET N-CH 80V 7.6A 8-Pin SOIC N T/R (Alt: FDS3580)
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EBV Elektronik

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FDS3580
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FDS3580 Similar Datasheet

Part Number Description
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D ...
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FDS3580
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This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC−DC power supply designs with higher overall efficiency. Features  7.6 A, 80 V:  RDS(ON) = 0.029 W @ VGS = 10 V  RDS(ON) = 0.033 W @ VGS = 6 V  Low Gate Charge (34 nC Typical)  Fast Switching Speed  High Performance Trench Technology for Extremely Low RDS(ON)  High Power and Current Handling Capability ...
FDS3590
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D SO-8 G S...




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