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FDS3572 Fairchild Semiconductor N-Channel MOSFET Datasheet

FDS3572 MOSFETs 80V N-Channel PowerTrench


Fairchild Semiconductor
FDS3572
Part Number FDS3572
Manufacturer Fairchild Semiconductor
Description FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pu...
Features
• rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A
• Qg(tot) = 31nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse) Applications
• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High Voltage Synchronous Rectifier for DC Bus Converters Formerly developmental type 82663 Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Sourc...

Document Datasheet FDS3572 datasheet pdf (628.37KB)
Distributor Distributor
Mouser Electronics
Stock 3665 In Stock
Price
1 units: 1.6 USD
10 units: 1.29 USD
100 units: 1.06 USD
250 units: 1.05 USD
500 units: 0.885 USD
1000 units: 0.759 USD
2500 units: 0.72 USD
5000 units: 0.693 USD
10000 units: 0.67 USD
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




FDS3572 Distributor

part
onsemi
FDS3572
MOSFET, N-CH, 80V, 8.9A, SOIC-8
5000 units: 995 KRW
2500 units: 1015 KRW
500 units: 1035 KRW
100 units: 1430 KRW
10 units: 1795 KRW
1 units: 2159 KRW
Distributor
element14 Asia-Pacific

750 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
N채널 80V 8.9A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
12500 units: 967.18286 KRW
5000 units: 1000.2992 KRW
2500 units: 1039.376 KRW
Distributor
DigiKey

2500 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R (Alt: FDS3572)
125000 units: 0.63106 USD
62500 units: 0.64627 USD
25000 units: 0.66222 USD
12500 units: 0.67899 USD
7500 units: 0.68769 USD
5000 units: 0.69662 USD
2500 units: 0.70579 USD
Distributor
Avnet Asia

0 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
MOSFETs 80V N-Channel PowerTrench
1 units: 1.6 USD
10 units: 1.29 USD
100 units: 1.06 USD
250 units: 1.05 USD
500 units: 0.885 USD
1000 units: 0.759 USD
2500 units: 0.72 USD
5000 units: 0.693 USD
10000 units: 0.67 USD
Distributor
Mouser Electronics

3665 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R
12500 units: 0.6635 USD
5000 units: 0.6836 USD
2500 units: 0.6907 USD
Distributor
Arrow Electronics

2500 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC T/R
500 units: 0.6879 USD
250 units: 0.9933 USD
100 units: 1.0397 USD
25 units: 1.2872 USD
10 units: 1.3104 USD
Distributor
Verical

857 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
5000 units: 0.67 USD
2500 units: 0.7 USD
Distributor
Future Electronics

0 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDS3572
Power Field-Effect Transistor, 8.9A, 80V, 0.016ohm, N-Channel, MOSFET
1000 units: 0.665 USD
500 units: 0.7041 USD
100 units: 0.7354 USD
25 units: 0.7667 USD
1 units: 0.7823 USD
Distributor
Rochester Electronics

700 In Stock
BuyNow BuyNow
part
onsemi
FDS3572
Transistor: N-MOSFET; unipolar; 80V; 5.6A; 2.5W; SO8
5000 units: 0.7 USD
2500 units: 0.71 USD
500 units: 0.79 USD
250 units: 0.85 USD
100 units: 0.95 USD
10 units: 1.28 USD
1 units: 1.53 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
onsemi
FDS3572
N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
No price available
Distributor
Ameya Holding Limited

2609 In Stock
No Longer Stocked





FDS3572 Similar Datasheet

Part Number Description
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D ...
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D...
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This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • • • • 9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-...
FDS3572
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N-Channel MOSFET
MOSFET – N-Channel, POWERTRENCH) 80 V, 8.9 A, 16 mW FDS3572 Features • RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A • Qg(tot) = 31 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free and Halide Free Applications • Primary Switch for Isolated DC−DC Converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current A C...
FDS3580
manufacturer
Fairchild Semiconductor
N-Channel MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V. • • • • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capabilit...
FDS3580
manufacturer
ON Semiconductor
N-Channel MOSFET
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC−DC power supply designs with higher overall efficiency. Features  7.6 A, 80 V:  RDS(ON) = 0.029 W @ VGS = 10 V  RDS(ON) = 0.033 W @ VGS = 6 V  Low Gate Charge (34 nC Typical)  Fast Switching Speed  High Performance Trench Technology for Extremely Low RDS(ON)  High Power and Current Handling Capability ...
FDS3590
manufacturer
Fairchild Semiconductor
N-Channel MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D SO-8 G S...




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