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FDN306P |
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| Part Number | FDN306P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2.6 A, –12 V. RDS(ON) = 40... |
| Features |
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Battery protection • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOT -3 TM G TA=25oC unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipati... |
| Document |
 FDN306P Data Sheet
PDF 144.58KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN306P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 3 | FDN302P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDN304P |
Kexin |
P-Channel MOSFET |
|
| 6 | FDN304P |
ON Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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