logo

2SK301 Panasonic Semiconductor N-Channel MOSFET Datasheet

2SK3019TL N채널 30V 100mA(Ta) 150mW(Ta) 표면 실장 EMT3


Panasonic Semiconductor
2SK301
Part Number 2SK301
Manufacturer Panasonic Semiconductor
Description ...
Features ...

Document Datasheet 2SK301 datasheet pdf (75.21KB)
Distributor Distributor
DigiKey
Stock 8114 In Stock
Price
1000 units: 110.581 KRW
500 units: 149.038 KRW
100 units: 182.76 KRW
10 units: 362.1 KRW
1 units: 519 KRW
BuyNow BuyNow BuyNow (Manufacturer a ROHM Semiconductor)




2SK301 Distributor

part
ROHM Semiconductor
2SK3019TL
MOSFET, SS SWITCHING
5000 units: 78 KRW
1000 units: 79 KRW
500 units: 113 KRW
Distributor
element14 Asia-Pacific

3577 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
2SK3019TL
N채널 30V 100mA(Ta) 150mW(Ta) 표면 실장 EMT3
1000 units: 110.581 KRW
500 units: 149.038 KRW
100 units: 182.76 KRW
10 units: 362.1 KRW
1 units: 519 KRW
Distributor
DigiKey

8114 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
2SK3019TL
Trans MOSFET N-CH 30V 0.1A 3-Pin EMT T/R (Alt: 2SK3019TL)
No price available
Distributor
Avnet Asia

0 In Stock
No Longer Stocked
part
Micro Commercial Components
2SK3018-TP
MOSFET N-Channel MOSFET
1 units: 0.41 USD
10 units: 0.289 USD
100 units: 0.119 USD
1000 units: 0.089 USD
3000 units: 0.071 USD
9000 units: 0.061 USD
24000 units: 0.057 USD
45000 units: 0.049 USD
Distributor
Mouser Electronics

7267 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
2SK3019TL
Trans MOSFET N-CH Si 30V 0.1A 3-Pin EMT T/R
25 units: 0.101 USD
50 units: 0.0762 USD
100 units: 0.0759 USD
200 units: 0.0706 USD
500 units: 0.0645 USD
1000 units: 0.0553 USD
2000 units: 0.0523 USD
Distributor
Chip1Stop

2206 In Stock
BuyNow BuyNow
part
HT JinYu Semiconductor
2SK3018
N-Channel Enhancement Mode MOSFET
60000 units: 0.0189 USD
30000 units: 0.0198 USD
21000 units: 0.0205 USD
6000 units: 0.0213 USD
Distributor
Verical

393000 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
2SK3018T106
MOSFETs N-CH 30V .1A SOT-323
3000 units: 0.044 USD
9000 units: 0.042 USD
30000 units: 0.041 USD
45000 units: 0.039 USD
Distributor
TTI

0 In Stock
BuyNow BuyNow
part
Toshiba America Electronic Components
2SK3017(F)
26 units: 2.728 USD
8 units: 3.0008 USD
1 units: 4.092 USD
Distributor
Quest Components

26 In Stock
BuyNow BuyNow
part
Micro Commercial Components
2SK3019-TP
Transistor: N-MOSFET; unipolar; 30V; 100mA; 0.15W; SOT523
3000 units: 0.048 USD
500 units: 0.0534 USD
100 units: 0.0605 USD
25 units: 0.0672 USD
5 units: 0.16 USD
Distributor
TME

2315 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
2SK3018T106
N-CH SMD MOSFET 30V 0,1A UMT3
3000 units: 0.0458 USD
6000 units: 0.0432 USD
9000 units: 0.0406 USD
15000 units: 0.0367 USD
21000 units: 0.0353 USD
Distributor
Rutronik

15000 In Stock
BuyNow BuyNow





2SK301 Similar Datasheet

Part Number Description
2SK300
manufacturer
Sony Corporation
N-Channel Silicon MOSFET
www.DataSheet4U.com ...
2SK3000
manufacturer
Hitachi Semiconductor
Silicon N Channel MOS FET
2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °...
2SK3000
manufacturer
Renesas Technology
Silicon N Channel MOS FET
2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features www.DataSheet4U.com R • Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZY–”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °C Channel dissipation Pch ...
2SK3001
manufacturer
Hitachi Semiconductor
GaAs HEMT Low Noise Amplifier
2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be th...
2SK3003
manufacturer
Sanken
MOSFET
2SK3003 External dimensions 1 ...... FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 200 V VGSS ±20 V ID ±18 A * ID (pulse) 1 ±72 A PD 35 (Tc = 25ºC) W EAS *2 120 mJ IAS 18 A Tch 150 ºC Tstg –55 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD = 25V, L = 650µH, IL = 18A, unclamped, RG = 50Ω, See Figure 1 on Page 5. Electrical Characteristics Symbol Ratings min typ V(BR) DSS 200 I GSS I DSS VTH 2.0 Re (yfs) 7 11 RDS (on) 130 Ciss 850 Coss 550 Crss 250 t d (on) 20 tr 50 td (off) 65 tf 80 VSD 1.0 t rr 500 max ±100 100 4.0 175 1.5 (Ta = 25ºC) Unit Conditions V ID = 100µA, VGS = 0V nA VGS = ±20V µA VDS...
2SK3003
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif...
2SK3004
manufacturer
ETC
MOSFET
2SK3004 External dimensions 1 ...... FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 250 V VGSS ±20 V ID ±18 A * ID (pulse) 1 ±72 A PD 35 (Tc = 25ºC) W EAS *2 120 mJ IAS 18 A Tch 150 ºC Tstg –55 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD = 25V, L = 670µH, IL = 18A, unclamped, RG = 50Ω, See Figure 1 on Page 5. Electrical Characteristics Symbol Ratings min typ V(BR) DSS 250 I GSS I DSS VTH 2.0 Re (yfs) 7 11 RDS (on) 200 Ciss 850 Coss 550 Crss 250 td (on) 20 tr 50 td (off ) 65 tf 80 VSD 1.0 t rr 700 max ±100 100 4.0 250 1.5 (Ta = 25ºC) Unit Conditions V ID = 100µA, VGS = 0V nA VGS = ±20V µA VDS...
2SK3004
manufacturer
INCHANGE
N-Channel MOSFET
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif...
2SK3009
manufacturer
Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power MOSFET
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK3009 (F8S60VX2) 600V 8A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. •œ Avalanche resistance guaranteed. APPLICATION •œ Switching power supply of OUTLINE DIMENSIONS Case : E-pack Case : STO-220 (Unit : mm) AC 100-200V input •œ Inverter •œ Power Factor Control Circuit RATINGS •œAbsolute Maximum Ratings • Tc i = 25•Ž•j Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current• DC•j i ID Continuous Drain Current• Peak) i ...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy